Method for manufacturing semiconductor device comprising adding oxygen to buffer film and insulating film

ABSTRACT

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an object, a method, or a manufacturingmethod. In addition, the present invention relates to a process, amachine, manufacture, or a composition of matter. In particular, oneembodiment of the present invention relates to a semiconductor device, adisplay device, a light-emitting device, a power storage device, amemory device, a driving method thereof, or a manufacturing methodthereof. Specifically, one embodiment of the present invention relatesto a semiconductor device including a field-effect transistor.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A semiconductor element such as a transistor, asemiconductor circuit, an arithmetic device, and a memory device areeach an embodiment of a semiconductor device. An imaging device, adisplay device, a liquid crystal display device, a light-emittingdevice, an electro-optical device, a power generation device (includinga thin film solar cell, an organic thin film solar cell, and the like),an input/output device, and an electronic device may each include asemiconductor device.

2. Description of the Related Art

Attention has been focused on a technique for forming a transistor usinga semiconductor thin film formed over a substrate having an insulatingsurface (also referred to as thin film transistor (TFT)). Suchtransistors are applied to a wide range of electronic devices such as anintegrated circuit (IC) and an image display device (display device). Asemiconductor material typified by silicon is widely known as a materialfor a semiconductor thin film that can be used for a transistor. Asanother material, an oxide semiconductor has been attracting attention.

A semiconductor device in which an insulating film that releases oxygenby heat is used as a base insulating film of an oxide semiconductor filmwhere a channel is formed is disclosed (see Patent Document 1, forexample).

REFERENCE Patent Document

[Patent Document 1] Japanese Published Patent Application No. 2012-9836

SUMMARY OF THE INVENTION

In a transistor formed using an oxide semiconductor film, oxygenvacancies in a channel region in the oxide semiconductor film causedefects of the electric characteristics of the transistor. For example,the threshold voltage of the transistor that contains oxygen vacanciesin the channel region in the oxide semiconductor film easily shifts inthe negative direction; thus, the transistor tends to have normally-oncharacteristics. This is because charge is generated because of theoxygen vacancies in the channel region, resulting in low resistance.

In addition, in the case where a channel region of a transistor using anoxide semiconductor film contains oxygen vacancies, electriccharacteristics of the transistor, typified by the threshold voltage,are changed with time or changed by a gate bias-temperature (BT) stresstest under light irradiation.

In view of the above problems, one object of one embodiment of thepresent invention is to provide a method for manufacturing asemiconductor device whose electric characteristics are prevented frombeing varied and whose reliability is improved. Another object of oneembodiment of the present invention is to provide a method formanufacturing a semiconductor device with low power consumption. Anotherobject of one embodiment of the present invention is to provide a novelmethod for manufacturing a semiconductor device. Another object of oneembodiment of the present invention is to suppress a change in electriccharacteristics and to improve reliability of a semiconductor deviceincluding a transistor formed using an oxide semiconductor. Anotherobject of one embodiment of the present invention is to provide asemiconductor device with low power consumption. Another object of oneembodiment of the present invention is to provide a novel semiconductordevice.

Note that the descriptions of these objects do not preclude theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all the objects. Other objects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

One embodiment of the present invention is a method for manufacturing asemiconductor device. In the method, an insulating film is formed overan oxide semiconductor film, a buffer film is formed over the insulatingfilm, oxygen is added to the buffer film and the insulating film, aconductive film is formed over the buffer film to which oxygen is added,and an impurity element is added to the oxide semiconductor film usingthe conductive film as a mask.

Note that after the impurity element is added to the oxide semiconductorfilm, an insulating film containing hydrogen and overlapping with theoxide semiconductor film may be formed.

Alternatively, an impurity element may be added to the oxidesemiconductor film using the conductive film as a mask after theinsulating film to which oxygen is added and the buffer film to whichoxygen is added are etched to expose part of the oxide semiconductorfilm, and the insulating film containing hydrogen and overlapping withthe oxide semiconductor film may be formed.

One embodiment of the present invention is a method for manufacturing asemiconductor device. In the method, an insulating film is formed overan oxide semiconductor film, a buffer film whose end portion overlapswith the oxide semiconductor film is formed over the insulating film,oxygen is added to the buffer film and the insulating film, a conductivefilm is formed over the buffer film to which oxygen is added, and animpurity element is added to the oxide semiconductor film using theconductive film as a mask.

Note that after the impurity element is added to the oxide semiconductorfilm, an insulating film containing hydrogen and overlapping with theoxide semiconductor film may be formed.

Alternatively, an impurity element may be added to the oxidesemiconductor film using the conductive film as a mask after theinsulating film to which oxygen is added is etched to expose part of theoxide semiconductor film, and the insulating film containing hydrogenand overlapping with the oxide semiconductor film may be formed.

Heat treatment may be performed after oxygen is added to the buffer filmand the insulating film.

In the case where the buffer film to which oxygen is added is aninsulator, the conductive film serves as a gate electrode. In the casewhere the buffer film to which oxygen is added is a semiconductor, theconductive film and the buffer film to which oxygen is addedcollectively serve as a gate electrode.

The buffer film may contain one or more of indium, zinc, titanium,aluminum, tungsten, tantalum, and molybdenum.

Note that the impurity element is one or more of hydrogen, boron,nitrogen, fluorine, aluminum, phosphorus, and a rare gas. Alternatively,the impurity element is hydrogen and one or more of boron, nitrogen,fluorine, aluminum, phosphorus, and rare gas.

The oxide semiconductor film has a region in contact with the insulatingfilm containing hydrogen. A typical example of the insulating filmcontaining hydrogen is a nitride insulating film. A typical example ofthe nitride insulating film is a silicon nitride film.

The gate electrode and the oxide semiconductor film may contain the samemetal element. In that case, the gate electrode is formed of aconductive oxide semiconductor film.

According to one embodiment of the present invention, a semiconductordevice whose electric characteristics are prevented from being variedand whose reliability is improved can be manufactured. According to oneembodiment of the present invention, a semiconductor device with lowpower consumption can be manufactured. According to one embodiment ofthe present invention, a method for manufacturing a novel semiconductordevice can be provided.

Note that the description of these effects does not preclude theexistence of other effects. One embodiment of the present invention doesnot necessarily achieve all the effects listed above. Other effects willbe apparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIG. 2 is a cross-sectional view illustrating one embodiment of asemiconductor device.

FIGS. 3A to 3D are cross-sectional views illustrating one embodiment ofa manufacturing process of a semiconductor device.

FIGS. 4A to 4C are cross-sectional views illustrating one embodiment ofa manufacturing process of a semiconductor device.

FIGS. 5A to 5D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIGS. 6A to 6D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIGS. 7A to 7D are cross-sectional views illustrating one embodiment ofa manufacturing process of a semiconductor device.

FIGS. 8A to 8D are cross-sectional views illustrating one embodiment ofa manufacturing process of a semiconductor device.

FIGS. 9A to 9C are cross-sectional views illustrating one embodiment ofa manufacturing process of a semiconductor device.

FIGS. 10A to 10D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIGS. 11A to 11D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIGS. 12A to 12D are cross-sectional views each illustrating oneembodiment of a semiconductor device.

FIGS. 13A to 13C are cross-sectional views illustrating one embodimentof a manufacturing process of a semiconductor device.

FIGS. 14A to 14C are cross-sectional views illustrating one embodimentof a manufacturing process of a semiconductor device.

FIGS. 15A to 15D are each a cross-sectional view illustrating oneembodiment of a semiconductor device.

FIGS. 16A to 16D are cross-sectional views illustrating one embodimentof a manufacturing process of a semiconductor device.

FIGS. 17A to 17C are cross-sectional views illustrating one embodimentof a manufacturing process of a semiconductor device.

FIGS. 18A to 18C are cross-sectional views illustrating one embodimentof a manufacturing process of a semiconductor device.

FIG. 19 illustrates a calculation model.

FIGS. 20A and 20B illustrate an initial state and a final state,respectively.

FIG. 21 shows an activation barrier.

FIGS. 22A and 22B illustrate an initial state and a final state,respectively.

FIG. 23 shows an activation barrier.

FIG. 24 shows the transition levels of V_(O)H.

FIG. 25 shows temperature dependence of resistivity.

FIG. 26 is a cross-sectional view illustrating one embodiment of asemiconductor device.

FIGS. 27A to 27D are each a cross-sectional view illustrating oneembodiment of a semiconductor device.

FIGS. 28A to 28F illustrate structures and band diagrams of a transistorof one embodiment of the present invention.

FIGS. 29A and 29B are cross-sectional views illustrating one embodimentof a semiconductor device.

FIGS. 30A to 30D are Cs-corrected high-resolution TEM images of a crosssection of a CAAC-OS and a cross-sectional schematic view of a CAAC-OS.

FIGS. 31A to 31D are Cs-corrected high-resolution TEM images of a planeof a CAAC-OS.

FIGS. 32A to 32C show the results of structural analysis of a CAAC-OSand a single crystal oxide semiconductor by XRD.

FIGS. 33A and 33B show electron diffraction patterns of a CAAC-OS.

FIG. 34 shows a change in crystal part of an In—Ga—Zn oxide induced byelectron irradiation.

FIGS. 35A to 35C are projection views illustrating a structure of aninput/output device of one embodiment.

FIGS. 36A to 36C are cross-sectional views each illustrating a structureof an input/output device of one embodiment.

FIGS. 37A, 37B1, and 37B2 illustrate configurations and driving methodsof a sensor circuit 19 and a converter CONV of one embodiment.

FIGS. 38A to 38G each illustrate an electronic device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the invention disclosed in thisspecification will be described with reference to the accompanyingdrawings. Note that the present invention is not limited to thefollowing description and it will be readily appreciated by thoseskilled in the art that modes and details can be modified in variousways without departing from the spirit and the scope of the presentinvention. Accordingly, the present invention should not be interpretedas being limited to the content of the embodiments below.

Note that the position, the size, the range, or the like of eachstructure illustrated in drawings and the like is not accuratelyrepresented in some cases for simplification. Therefore, the disclosedinvention is not necessarily limited to the position, the size, therange, or the like disclosed in the drawings and the like.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not mean limitation of the number ofcomponents.

Note that the term such as “over” or “below” in this specification andthe like does not necessarily mean that a component is placed “directlyon” or “directly under” another component. For example, the expression“a gate electrode over a gate insulating film” does not preclude thecase where there is an additional component between the gate insulatingfilm and the gate electrode.

In addition, in this specification and the like, the term such as an“electrode” or a “wiring” does not limit a function of a component. Forexample, an “electrode” is used as part of a “wiring” in some cases, andvice versa. Furthermore, the term “electrode” or “wiring” can also meana combination of a plurality of “electrodes” and “wirings” formed in anintegrated manner.

In this specification and the like, a transistor is an element having atleast three terminals: a gate, a drain, and a source. In addition, thetransistor has a channel region between a drain (a drain terminal, adrain region, or a drain electrode) and a source (a source terminal, asource region, or a source electrode), and current can flow through thedrain region, the channel region, and the source region. Note that inthis specification and the like, a channel region refers to a regionthrough which current mainly flows.

Functions of a “source” and a “drain” are sometimes replaced with eachother when a transistor of opposite polarity is used or when thedirection of flow of current is changed in circuit operation, forexample. Therefore, the terms “source” and “drain” can be used to denotethe drain and the source, respectively, in this specification and thelike.

Note that in this specification and the like, the term “electricallyconnected” includes the case where components are connected through anobject having any electric function. There is no particular limitationon an “object having any electric function” as long as electric signalscan be transmitted and received between components that are connectedthrough the object. Examples of an “object having any electric function”are a switching element such as a transistor, a resistor, an inductor, acapacitor, and elements with a variety of functions as well as anelectrode and a wiring.

In this specification, the term “parallel” indicates that the angleformed between two straight lines is greater than or equal to −10° andless than or equal to 10°, and accordingly also includes the case wherethe angle is greater than or equal to −5° and less than or equal to 5°.The term “substantially parallel” indicates that the angle formedbetween two straight lines is greater than or equal to −30° and lessthan or equal to 30°. The term “perpendicular” indicates that the angleformed between two straight lines is greater than or equal to 80° andless than or equal to 100°, and accordingly also includes the case wherethe angle is greater than or equal to 85° and less than or equal to 95°.The term “substantially perpendicular” indicates that the angle formedbetween two straight lines is greater than or equal to 60° and less thanor equal to 120°.

In this specification, trigonal and rhombohedral crystal systems areincluded in a hexagonal crystal system.

Embodiment 1

In this embodiment, embodiments of a semiconductor device and a methodfor manufacturing the semiconductor device will be described withreference to FIGS. 1A to 1D, FIG. 2, FIGS. 3A to 3D, and FIGS. 4A to 4C.

<Structure of Semiconductor Device>

FIGS. 1A to 1D are each a cross-sectional view of a top-gateself-aligned transistor that is an example of a transistor in asemiconductor device.

A transistor illustrated in FIG. 1A includes an oxide semiconductor film55, an insulating film 57 in contact with the oxide semiconductor film55, a buffer film 60 over the insulating film 57, and a conductive film61 in contact with the buffer film 60 and overlapping with the oxidesemiconductor film 55.

The oxide semiconductor film 55 includes a first region 55 a and secondregions 55 b and 55 c between which the first region 55 a is positioned.The first region 55 a has a function of a channel region. The secondregions 55 b and 55 c have functions of a source region and a drainregion. Since the resistivity of the second regions 55 b and 55 c islower than that of the first region 55 a, the second regions 55 b and 55c can be referred to as low-resistance regions.

The oxide semiconductor film 55 of the transistor is formed over aninsulating film 53 over a substrate 51. An insulating film 65 containinghydrogen in contact with the second regions 55 b and 55 c of the oxidesemiconductor film 55 may be provided.

Furthermore, an insulating film 67 in contact with the insulating film65 containing hydrogen may be provided. In addition, a pair ofconductive films 68 and 69 may be provided so as to be in contact withthe second regions 55 b and 55 c of the oxide semiconductor film 55 inopenings in the insulating film 65 containing hydrogen and theinsulating film 67. Moreover, an insulating film 79 may be provided overthe insulating film 67 and the pair of conductive films 68 and 69.

In the oxide semiconductor film 55, the first region 55 a contains feweroxygen vacancies than the second regions 55 b and 55 c.

When oxygen vacancies occur in a channel region of a transistor,electrons serving as carriers are generated because of the oxygenvacancies; as a result, the transistor tends to have normally-oncharacteristics. Since the first region 55 a in the oxide semiconductorfilm 55 has a function of a channel region, reducing oxygen vacancies inthe first region 55 a is a key factor for stable transistorcharacteristics.

In methods for forming a transistor of this embodiment, a buffer film(film to be the buffer film 60 in FIGS. 1A to 1D) is formed over aninsulating film (insulating film to be the insulating film 57 in FIGS.1A to 1D), and excess oxygen is added to the insulating film through thebuffer film. In the step of adding oxygen, the buffer film suppressesrelease of oxygen and reduces damage to the insulating film. As aresult, the insulating film contains excess oxygen. Then, excess oxygenin the insulating film is moved to an oxide semiconductor film (oxidesemiconductor film to be the oxide semiconductor film 55 in FIGS. 1A to1D) by heat treatment, whereby oxygen vacancies in the oxidesemiconductor film can be reduced. To add excess oxygen, an ionimplantation method, an ion doping method, or plasma treatment can beused, for example.

Note that if excess oxygen is directly added to the insulating filmwithout forming the buffer film over the insulating film, a surface ofthe insulating film is etched by several nanometers. The surface of theinsulating film contains added oxygen; this means that the etchingresults in release of part of the added oxygen. Consequently, oxygencontained in the insulating film is insufficient to reduce oxygenvacancies in the oxide semiconductor film. However, since oxygen isadded to the insulating film through the buffer film formed over theinsulating film, the buffer film can prevent etching of the surface ofthe insulating film. Accordingly, oxygen sufficient to reduce oxygenvacancies in the oxide semiconductor film can be added to the insulatingfilm.

In addition, since oxygen is added to the insulating film through thebuffer film, damage to the insulating film can be reduced while excessoxygen is added to the insulating film. This means that the buffer filmserves as a buffer for the insulating film when excess oxygen isintroduced to the insulating film through the buffer film.

The buffer film 60 contains one or more of indium, zinc, titanium,aluminum, tungsten, tantalum, and molybdenum. The buffer film 60 isformed using, for example, a metal oxide containing any of the abovemetal elements, or a metal oxynitride containing any of the above metalelements.

The buffer film 60 is an insulator or a semiconductor depending on themetal element. In the case where the buffer film 60 is formed using aninsulator, that is, in the case where the buffer film 60 is aninsulating film, the insulating film 57 and the buffer film 60collectively have a function of a gate insulating film and theconductive film 61 has a function of a gate electrode. In contrast, inthe case where the buffer film 60 is formed using a semiconductor, thatis, in the case where the buffer film 60 is a semiconductor film, theinsulating film 57 has a function of a gate insulating film and thebuffer film 60 and the conductive film 61 collectively have a functionof a gate electrode.

In the oxide semiconductor film 55, the second regions 55 b and 55 ceach have a region containing an impurity element.

When a source gas for the oxide semiconductor film contains an impurityelement, the first region 55 a and the second regions 55 b and 55 ccontain the impurity element. In that case, the second regions 55 b and55 c each have a region in which the concentration of the impurityelement is different from, typically higher than, that of the firstregion 55 a. In the case where the oxide semiconductor film 55 is formedby a sputtering method using a rare gas as a sputtering gas, forexample, the oxide semiconductor film 55 contains the rare gas. Inaddition, the rare gas is intentionally added to the second regions 55 band 55 c to form oxygen vacancies, whereby a region with a highconcentration of the rare gas is formed in each of the second regions 55b and 55 c. As a result, a region with a higher concentration of therare gas than that of the first region 55 a is formed in each of thesecond regions 55 b and 55 c. Note that an impurity element differentfrom that added to the first region 55 a may be added to the secondregions 55 b and 55 c.

Typical examples of the impurity element are one or more of a rare gas,hydrogen, boron, nitrogen, fluorine, aluminum, and phosphorus. Typicalexamples of the rare gas are helium, neon, argon, krypton, and xenon.

In the case where boron, nitrogen, fluorine, aluminum, or phosphorus iscontained as the impurity element in the second regions 55 b and 55 c,the impurity concentration of each of the second regions 55 b and 55 cis higher than that in the first region 55 a.

Furthermore, the second regions 55 b and 55 c in the oxide semiconductorfilm 55 contain hydrogen and one or more of a rare gas, boron, nitrogen,fluorine, aluminum, and phosphorus. In addition, the second regions 55 band 55 c each have a region in which the hydrogen concentration isdifferent from, specifically higher than, that of the first region 55 a.This is because hydrogen contained in the insulating film 65 is directlydiffused or diffused through the insulating film 57 into the secondregions 55 b and 55 c of the oxide semiconductor film 55.

The hydrogen concentration of each of the second regions 55 b and 55 c,which is measured by secondary ion mass spectrometry (SIMS), is higherthan or equal to 8×10¹⁹ atoms/cm³, preferably higher than or equal to1×10²⁰ atoms/cm³, further preferably higher than or equal to 5×10²⁰atoms/cm³. The hydrogen concentration of the first region 55 a, which ismeasured by SIMS, is lower than or equal to 5×10¹⁹ atoms/cm³, preferablylower than or equal to 1×10¹⁹ atoms/cm³, further preferably lower thanor equal to 5×10¹⁸ atoms/cm³, still further preferably lower than orequal to 1×10¹⁸ atoms/cm³, yet still further preferably lower than orequal to 5×10¹⁷ atoms/cm³, yet still further preferably lower than orequal to 1×10¹⁶ atoms/cm³.

When the hydrogen concentration of the first region 55 a is set in therange described above, generation of electrons serving as carriers inthe first region 55 a can be suppressed, and the transistor has positivethreshold voltage (normally-off characteristics).

When hydrogen is contained in the oxide semiconductor film in whichoxygen vacancies are generated by addition of the impurity element,hydrogen enters an oxygen vacant site and forms a donor level in thevicinity of the conduction band. As a result, the conductivity of theoxide semiconductor film is increased, so that the oxide semiconductorfilm becomes a conductor. The oxide semiconductor film having become aconductor can be referred to as an oxide conductor film. That is, it canbe said that, in the oxide semiconductor film 55, the first region 55 ais formed of an oxide semiconductor, and the second regions 55 b and 55c are formed of an oxide conductor. In the oxide semiconductor film 55,the second regions 55 b and 55 c have higher hydrogen concentrationsthan the first region 55 a, and have more oxygen vacancies than thefirst region 55 a because of addition of the impurity element. Theresistivity of each of the second regions 55 b and 55 c is preferablygreater than or equal to 1×10⁻³ Ωcm and less than 1×10⁴ Ωcm, furtherpreferably greater than or equal to 1×10⁻³ Ωcm and less than 1×10⁻¹ Ωcm.

Oxide semiconductors generally have a visible light transmittingproperty because of their large energy gap. In contrast, an oxideconductor is an oxide semiconductor having a donor level in the vicinityof the conduction band. Thus, the influence of light absorption due tothe donor level is small, so that an oxide conductor has a visible lighttransmitting property comparable to that of an oxide semiconductor.

In the case where the buffer film 60 of the transistor illustrated inFIG. 1A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61. In that case, a channellength is a distance between the second regions 55 b and 55 c.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have a regionoverlapping with part of the conductive film 61 as in a transistorillustrated in FIG. 1B. Such a region can be referred to as an overlapregion Lov. Note that the length of the overlap region Lov is preferablyless than 20%, 10%, 5%, or 2% of a channel length L. In that case, thechannel length is the distance between the second regions 55 b and 55 c.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, a third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and a third region 55 emay be provided between the first region 55 a and the second region 55 cas in a transistor illustrated in FIG. 1C. Note that the third regions55 d and 55 e have lower impurity concentration and higher resistivitythan the second regions 55 b and 55 c, and serve as electric-fieldrelaxation regions. In that case, a channel length is the distancebetween the third regions 55 d and 55 e.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 as in a transistorillustrated in FIG. 1D. In other words, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c do not necessarilyoverlap with the conductive film 61. A region which is in the firstregion 55 a and does not overlap with the conductive film 61 can bereferred to as an offset region Loff. In that case, a channel length isthe width of a region which is in the first region 55 a and overlapswith the conductive film 61. Note that the length of the offset regionLoff is preferably less than 20%, 10%, 5%, or 2% of the channel length.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 1A to 1D is formed using a semiconductor film, thebuffer film 60 and the conductive film 61 collectively serve as a gateelectrode.

Thus, in the case where the buffer film 60 in FIG. 1A is formed using asemiconductor film, the interfaces of the first region 55 a with thesecond regions 55 b and 55 c may be substantially aligned with the edgesof the buffer film 60.

In the case where the buffer film 60 in FIG. 1B is formed using asemiconductor film, the overlap regions Lov are regions where the secondregions 55 b and 55 c overlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 1D is formed using asemiconductor film, the channel length is the width of a region which isin the first region 55 a and overlaps with the buffer film 60.

The components illustrated in FIGS. 1A to 1D will be described in detailbelow.

A variety of substrates can be used as the substrate 51 withoutlimitation to a particular type of substrate. As the substrate, asemiconductor substrate (e.g., a single crystal substrate or a siliconsubstrate), an SOI substrate, a glass substrate, a quartz substrate, aplastic substrate, a metal substrate, a stainless steel substrate, asubstrate including stainless steel foil, a tungsten substrate, asubstrate including tungsten foil, a flexible substrate, an attachmentfilm, paper including a fibrous material, a base material film, or thelike can be used, for example. As an example of a glass substrate, abarium borosilicate glass substrate, an aluminoborosilicate glasssubstrate, soda lime glass substrate, and the like can be given.Examples of a flexible substrate, an attachment film, a base materialfilm, or the like are as follows: plastic typified by polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES); a synthetic resin such as acrylic; polypropylene;polyester; polyvinyl fluoride; polyvinyl chloride; polyamide; polyimide;aramid; epoxy; an inorganic vapor deposition film; and paper.Specifically, when a transistor is formed using a semiconductorsubstrate, a single crystal substrate, an SOI substrate, or the like, itis possible to form a transistor with few variations in characteristics,size, shape, or the like and with high current supply capability and asmall size. By forming a circuit with the use of such a transistor,power consumption of the circuit can be reduced or the circuit can behighly integrated.

Alternatively, a flexible substrate may be used as the substrate 51, andthe transistor may be provided directly on the flexible substrate.Alternatively, a separation layer may be provided between the substrate51 and the transistor. The separation layer can be used when part or thewhole of a semiconductor device formed over the separation layer iscompleted and separated from the substrate 51 and transferred to anothersubstrate. In such a case, the transistor can be transferred to asubstrate having low heat resistance or a flexible substrate as well.For the above separation layer, a stack including inorganic films, whichare a tungsten film and a silicon oxide film, or an organic resin filmof polyimide or the like formed over a substrate can be used, forexample.

Examples of a substrate to which the transistor is transferred include,in addition to the above-described substrates over which the transistorcan be formed, a paper substrate, a cellophane substrate, an aramid filmsubstrate, a polyimide film substrate, a stone substrate, a woodsubstrate, a cloth substrate (including a natural fiber (e.g., silk,cotton, or hemp), a synthetic fiber (e.g., nylon, polyurethane, orpolyester), a regenerated fiber (e.g., acetate, cupra, rayon, orregenerated polyester), or the like), a leather substrate, a rubbersubstrate, and the like. By using such a substrate, a transistor withexcellent properties or a transistor with low power consumption can beformed, a device with high durability can be formed, heat resistance canbe provided, or reduction in weight or thickness can be achieved.

The insulating film 53 can be formed to have a single-layer structure ora stacked-layer structure including an insulating film containing oxygenor an insulating film containing nitrogen. A typical example of aninsulating film containing oxygen is an oxide insulating film. A typicalexample of an insulating film containing nitrogen is a nitrideinsulating film. Note that in the insulating film 53, an insulating filmcontaining oxygen is preferably used for at least a region in contactwith the oxide semiconductor film 55, in order to improvecharacteristics of the interface with the oxide semiconductor film 55.An oxide insulating film that has a function of releasing oxygen by heattreatment is preferably used as the insulating film 53, in which caseoxygen contained in the insulating film 53 can be moved to the oxidesemiconductor film 55 by the heat treatment.

The insulating film 53 may be formed to have a single-layer structure ora stacked-layer structure using, for example, silicon oxide, siliconoxynitride, silicon nitride oxide, silicon nitride, aluminum oxide,hafnium oxide, gallium oxide, or Ga—Zn oxide.

Note that in this specification and the like, a silicon oxynitride filmrefers to a film in which the proportion of oxygen is higher than thatof nitrogen. The silicon oxynitride film preferably contains oxygen,nitrogen, silicon, and hydrogen in the ranges of 55 atomic % to 65atomic %, 1 atomic % to 20 atomic %, 25 atomic % to 35 atomic %, and 0.1atomic % to 10 atomic %, respectively. Furthermore, a silicon nitrideoxide film refers to a film in which the proportion of nitrogen ishigher than that of oxygen. The silicon nitride oxide film preferablycontains nitrogen, oxygen, silicon, and hydrogen in the ranges of 55atomic % to 65 atomic %, 1 atomic % to 20 atomic %, 25 atomic % to 35atomic %, and 0.1 atomic % to 10 atomic %, respectively.

The oxide semiconductor film 55 is typically formed of a metal oxidesuch as an In—Ga oxide, an In—Zn oxide, or an In-M-Zn oxide (M is Al,Ga, Y, Zr, Sn, La, Ce, or Nd).

Note that in the case where the oxide semiconductor film 55 is anIn-M-Zn oxide film, the proportions of In and M when the summation of Inand M is assumed to be 100 atomic % are preferably as follows: theproportion of In is greater than or equal to 25 atomic % and theproportion of M is less than 75 atomic %, further preferably, theproportion of In is greater than or equal to 34 atomic % and theproportion of M is less than 66 atomic %.

The energy gap of the oxide semiconductor film 55 is 2 eV or more,preferably 2.5 eV or more, further preferably 3 eV or more.

The thickness of the oxide semiconductor film 55 is greater than orequal to 3 nm and less than or equal to 200 nm, preferably greater thanor equal to 3 nm and less than or equal to 100 nm, further preferablygreater than or equal to 3 nm and less than or equal to 50 nm.

In the case where the oxide semiconductor film 55 is an In-M-Zn oxidefilm (M is Al, Ga, Y, Zr, Sn, La, Ce, or Nd), it is preferable that theatomic ratio of metal elements of a sputtering target used for formingthe In-M-Zn oxide film satisfy the following: the number of In atoms isgreater than or equal to the number of M atoms, and the number of Znatoms is greater than or equal to the number of M atoms. As the atomicratio of metal elements of such a sputtering target, In:M:Zn=1:1:1,In:M:Zn=1:1:1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In:M:Zn=2:1:3,In:M:Zn=3:1:2, or the like is preferable. Note that the proportion ofeach metal element in the atomic ratio of the oxide semiconductor film55 to be formed varies within a range of ±40% of that in the aboveatomic ratio of the sputtering target as an error.

When silicon or carbon that is an element belonging to Group 14 iscontained in the oxide semiconductor film 55, oxygen vacancies areincreased in the oxide semiconductor film 55, and the oxidesemiconductor film 55 becomes an n-type film. Thus, the concentration ofsilicon or carbon in the oxide semiconductor film 55, which is measuredby SIMS, is lower than or equal to 2×10¹⁸ atoms/cm³, preferably lowerthan or equal to 2×10¹⁷ atoms/cm³. As a result, the transistor haspositive threshold voltage (normally-off characteristics).

The concentration of alkali metal or alkaline earth metal in the oxidesemiconductor film 55, which is measured by SIMS, is lower than or equalto 1×10¹⁸ atoms/cm³, preferably lower than or equal to 2×10¹⁶ atoms/cm³.Alkali metal and alkaline earth metal might generate carriers whenbonded to an oxide semiconductor, which may increase the off-statecurrent of the transistor. Thus, it is preferable to reduce theconcentration of alkali metal or alkaline earth metal in the oxidesemiconductor film 55. As a result, the transistor has positivethreshold voltage (normally-off characteristics).

In addition, when nitrogen is contained in the oxide semiconductor film55, electrons serving as carriers are generated to increase the carrierdensity, so that the oxide semiconductor film 55 easily becomes ann-type film. Thus, a transistor including an oxide semiconductor thatcontains nitrogen is likely to be normally on. For this reason, nitrogenin the first region 55 a in the oxide semiconductor film 55 ispreferably reduced as much as possible. The concentration of nitrogenmeasured by SIMS is preferably set to be, for example, less than orequal to 5×10¹⁸ atoms/cm³.

When impurities in the first region 55 a in the oxide semiconductor film55 are reduced, the carrier density of the first region 55 a in theoxide semiconductor film 55 can be lowered. The carrier density of thefirst region 55 a in the oxide semiconductor film 55 is preferably lessthan 8×10¹¹/cm³, further preferably less than 1×10¹¹/cm³, still furtherpreferably greater than or equal to 1×10⁻⁹/cm³ and less than 1×10¹⁰/cm³.

An oxide semiconductor film having a low impurity concentration and alow density of defect states can be used for the first region 55 a inthe oxide semiconductor film 55, in which case the transistor can havemore excellent electric characteristics. Here, the state in whichimpurity concentration is low and density of defect states is low (thenumber of oxygen vacancies is small) is referred to as “highly purifiedintrinsic” or “substantially highly purified intrinsic”. A highlypurified intrinsic or substantially highly purified intrinsic oxidesemiconductor has few carrier generation sources, and thus has a lowcarrier density in some cases. Thus, a transistor including the firstregion 55 a in the oxide semiconductor film 55 in which a channel regionis formed is likely to have positive threshold voltage (normally-offcharacteristics). A highly purified intrinsic or substantially highlypurified intrinsic oxide semiconductor film has a low density of defectstates and accordingly has few carrier traps in some cases. Furthermore,a highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film has an extremely low off-state current; even inthe case of a semiconductor element has a channel width of 1×10⁶ μm anda channel length L of 10 μm, the off-state current can be less than orequal to the measurement limit of a semiconductor parameter analyzer,i.e., less than or equal to 1×10⁻¹³ A, at a voltage (drain voltage)between a source electrode and a drain electrode of from 1 V to 10 V.Thus, the transistor whose channel region is formed in the first region55 a in the oxide semiconductor film 55 has a small variation inelectric characteristics and high reliability in some cases.

The oxide semiconductor film 55 may have, for example, anon-single-crystal structure. The non-single crystal structure includesa c-axis aligned crystalline oxide semiconductor (CAAC-OS) which will bedescribed later, a polycrystalline structure, a microcrystallinestructure which will be described later, or an amorphous structure, forexample. Among the non-single crystal structure, the amorphous structurehas the highest density of defect states, whereas CAAC-OS has the lowestdensity of defect states.

Note that the oxide semiconductor film 55 may be a mixed film includingtwo or more of the following: a region having an amorphous structure, aregion having a microcrystalline structure, a region having apolycrystalline structure, a region of CAAC-OS, and a region having asingle-crystal structure. The mixed film has a single-layer structureincluding, for example, two or more of a region having an amorphousstructure, a region having a microcrystalline structure, a region havinga polycrystalline structure, a CAAC-OS region, and a region having asingle-crystal structure in some cases. Furthermore, the mixed film hasa stacked-layer structure of two or more of a region having an amorphousstructure, a region having a microcrystalline structure, a region havinga polycrystalline structure, a CAAC-OS region, and a region having asingle-crystal structure in some cases.

The insulating film 57 is preferably formed to have a single-layerstructure or a stacked-layer structure including an insulating filmcontaining oxygen or an insulating film containing nitrogen. Typically,an oxide insulating film can be used as the insulating film containingoxygen, and a nitride insulating film can be used as the insulating filmcontaining nitrogen. Note that in the insulating film 57, an insulatingfilm containing oxygen typified by an oxide insulating film ispreferably used for at least a region in contact with the oxidesemiconductor film 55, in order to improve characteristics of theinterface with the oxide semiconductor film 55.

For the oxide insulating film, silicon oxide, silicon oxynitride,aluminum oxide, hafnium oxide, gallium oxide, or a Ga—Zn oxide can beused, for example. For the nitride insulating film, silicon nitrideoxide, or silicon nitride can be used, for example.

Furthermore, when an insulating film having a blocking effect againstoxygen, hydrogen, water, and the like is provided as the insulating film57, it is possible to prevent outward diffusion of oxygen from the firstregion 55 a in the oxide semiconductor film 55 and entry of hydrogen,water, or the like into the first region 55 a in the oxide semiconductorfilm 55 from the outside. The insulating film having a blocking effectagainst oxygen, hydrogen, water, and the like can be formed usingaluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride,yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, orthe like.

The insulating film 57 may be formed using a high-k material such ashafnium silicate (HfSiO_(x)), hafnium silicate to which nitrogen isadded (HfSi_(x)O_(y)N_(z)), hafnium aluminate to which nitrogen is added(HfAl_(x)O_(y)N_(z)), hafnium oxide, or yttrium oxide, so that gateleakage current of the transistor can be reduced.

The conductive film 61 can be formed using a metal element selected fromaluminum, chromium, copper, tantalum, titanium, molybdenum, nickel,iron, cobalt, and tungsten; an alloy containing any of these metalelements as a component; an alloy containing these metal elements incombination; or the like. Furthermore, one or more metal elementsselected from manganese and zirconium may be used. The conductive film61 may have a single-layer structure or a stacked structure of two ormore layers. For example, any of the following can be used: asingle-layer structure of an aluminum film containing silicon; asingle-layer structure of a copper film containing manganese; two-layerstructure in which a titanium film is stacked over an aluminum film; atwo-layer structure in which a titanium film is stacked over a titaniumnitride film; a two-layer structure in which a tungsten film is stackedover a titanium nitride film; a two-layer structure in which a tungstenfilm is stacked over a tantalum nitride film or a tungsten nitride film;a two-layer structure in which a copper film is stacked over a copperfilm containing manganese; a three-layer structure in which a titaniumfilm, an aluminum film, and a titanium film are stacked in this order; athree-layer structure in which a copper film containing manganese, acopper film, and a copper film containing manganese are stacked in thisorder; and the like. Alternatively, an alloy film or a nitride film inwhich aluminum and one or more elements selected from titanium,tantalum, tungsten, molybdenum, chromium, neodymium, and scandium arecombined may be used.

The conductive film 61 can also be formed using a light-transmittingconductive material such as indium tin oxide, indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium zinc oxide, or indium tin oxide containing silicon oxide.It is also possible to have a stacked-layered structure formed using theabove light-transmitting conductive material and the above metalelement.

Alternatively, as illustrated in FIG. 2, the conductive film 61 may havea stacked-layer structure including a conductive film 61 a in contactwith the buffer film 60 and a conductive film 61 b in contact with theconductive film 61 a. An edge of the conductive film 61 a does notnecessarily overlap with the conductive film 61 b. That is, the edge ofthe conductive film 61 a may extend beyond the conductive film 61 b.

The insulating film 65 containing hydrogen is preferably formed using anitride insulating film. For the nitride insulating film, siliconnitride, silicon nitride oxide, aluminum nitride, aluminum nitrideoxide, or the like can be used. The hydrogen concentration of theinsulating film 65 containing hydrogen is preferably greater than orequal to 1×10²² atoms/cm³, in which case hydrogen can be diffused intothe oxide semiconductor film.

The pair of conductive films 68 and 69 is formed to have a single-layerstructure or a stacked-layer structure using any of metals such asaluminum, titanium, chromium, nickel, copper, yttrium, zirconium,molybdenum, iron, cobalt, silver, tantalum, and tungsten and an alloycontaining any of these metals as a main component. For example, asingle-layer structure of an aluminum film containing silicon; asingle-layer structure of a copper film containing manganese; atwo-layer structure in which an aluminum film is stacked over a titaniumfilm; a two-layer structure in which an aluminum film is stacked over atungsten film; a two-layer structure in which a copper film is stackedover a copper-magnesium-aluminum alloy film; a two-layer structure inwhich a copper film is stacked over a titanium film; a two-layerstructure in which a copper film is stacked over a tungsten film; atwo-layer structure in which a copper film is stacked over a copper filmcontaining manganese; a three-layer structure in which a titanium filmor a titanium nitride film, an aluminum film or a copper film, and atitanium film or a titanium nitride film are stacked in this order; athree-layer structure in which a molybdenum film or a molybdenum nitridefilm, an aluminum film or a copper film, and a molybdenum film or amolybdenum nitride film are stacked in this order; a three-layerstructure in which a copper film containing manganese, a copper film,and a copper film containing manganese are stacked in this order; andthe like can be given. Note that a transparent conductive materialcontaining indium oxide, tin oxide, or zinc oxide may be used.

The insulating films 67 and 79 can be formed using the same material asthe insulating film 53 or the insulating film 57 as appropriate.

Note that when the pair of conductive films 68 and 69 contains copper,the insulating film 79 is preferably formed using an insulating filmcontaining nitrogen, in which case diffusion of copper can be prevented.A typical example of the insulating film containing nitrogen is anitride insulating film. A nitride insulating film can be formed usingsilicon nitride, silicon nitride oxide, aluminum nitride, aluminumnitride oxide, or the like.

<Method for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 1Awill be described with reference to FIGS. 3A to 3D, and FIGS. 4A to 4C.

Films included in the transistor (e.g., an insulating film, an oxidesemiconductor film, a metal oxide film, and a conductive film) can beformed by a sputtering method, a chemical vapor deposition (CVD) method,a vacuum vapor deposition method, or a pulsed laser deposition (PLD)method. Alternatively, a coating method or a printing method can beused. Although a sputtering method and a plasma-enhanced chemical vapordeposition (PECVD) method are typical examples of a film formationmethod, a thermal CVD method may be used. As the thermal CVD method, ametal organic chemical vapor deposition (MOCVD) method or an atomiclayer deposition (ALD) method may be used, for example. The films arepreferably stacked successively without being exposed to the air using amulti-chamber deposition apparatus including a load lock chamber, inwhich case the amount of impurities at the interfaces between the filmscan be reduced.

Deposition by the thermal CVD method may be performed in such a mannerthat the pressure in a chamber is set to an atmospheric pressure or areduced pressure, and a source gas and an oxidizer are supplied to thechamber at a time and react with each other in the vicinity of thesubstrate or over the substrate. Thus, no plasma is generated in thedeposition; therefore, the thermal CVD method has an advantage that nodefect due to plasma damage is caused.

Deposition by the ALD method may be performed in such a manner that thepressure in a chamber is set to an atmospheric pressure or a reducedpressure, source gases for reaction are sequentially introduced into thechamber, and then the sequence of the gas introduction is repeated. Forexample, two or more kinds of source gases are sequentially supplied tothe chamber by switching respective switching valves (also referred toas high-speed valves). In such a case, a first source gas is introduced,an inert gas (e.g., argon or nitrogen) or the like is introduced at atime or after the first source gas is introduced so that the sourcegases are not mixed, and then a second source gas is introduced. Notethat in the case where the first source gas and the inert gas areintroduced at a time, the inert gas serves as a carrier gas, and theinert gas may also be introduced at the same time as the second sourcegas. Alternatively, the first source gas may be exhausted by vacuumevacuation instead of the introduction of the inert gas, and then thesecond source gas may be introduced. The first source gas is adsorbed onthe surface of the substrate to form a first single-atomic layer; thenthe second source gas is introduced to react with the firstsingle-atomic layer; as a result, a second single-atomic layer isstacked over the first single-atomic layer, so that a thin film isformed.

The sequence of the gas introduction is repeated plural times until adesired thickness is obtained, whereby a thin film with excellent stepcoverage can be formed. The thickness of the thin film can be adjustedby the number of repetition times of the sequence of the gasintroduction; therefore, an ALD method makes it possible to accuratelyadjust a thickness and thus is suitable for manufacturing a minutetransistor.

As illustrated in FIG. 3A, the insulating film 53 and an oxidesemiconductor film 54 are formed over the substrate 51. Then, aninsulating film 56 is formed over the oxide semiconductor film 54 and abuffer film 58 is formed over the insulating film 56. Subsequently,oxygen 62 is added to the insulating film 56 through the buffer film 58.

The insulating film 53 can be formed by a sputtering method, a CVDmethod, an evaporation method, a pulsed laser deposition (PLD) method, aprinting method, a coating method, or the like as appropriate. Theinsulating film 53 can be formed in the following manner: an insulatingfilm is formed over the substrate 51, and then oxygen is added to theinsulating film. Examples of the oxygen that is added to the insulatingfilm include an oxygen radical, an oxygen atom, an oxygen atomic ion, anoxygen molecular ion, and the like. As a method for adding the oxygen,an ion doping method, an ion implantation method, plasma treatment, orthe like can be given.

A formation method of the oxide semiconductor film 54 is describedbelow. An oxide semiconductor film is formed over the insulating film 53by a sputtering method, a coating method, a pulsed laser depositionmethod, a laser ablation method, a thermal CVD method, or the like.Then, after a mask is formed over the oxide semiconductor film by alithography process, the oxide semiconductor film is partly etched usingthe mask. Thus, the oxide semiconductor film 54 illustrated in FIG. 3Acan be formed. After that, the mask is removed.

Alternatively, by using a printing method for forming the oxidesemiconductor film 54, the oxide semiconductor film 54 subjected toelement isolation can be formed directly.

As a power supply device for generating plasma in the case of formingthe oxide semiconductor film by a sputtering method, an RF power supplydevice, an AC power supply device, a DC power supply device, or the likecan be used as appropriate.

As a sputtering gas, a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed gas of a rare gas and oxygen is used asappropriate. In the case of using the mixed gas of a rare gas andoxygen, the proportion of oxygen to a rare gas is preferably increased.

Furthermore, a target may be appropriately selected in accordance withthe composition of the oxide semiconductor film to be formed.

For example, in the case where the oxide semiconductor film is formed bya sputtering method at a substrate temperature higher than or equal to150° C. and lower than or equal to 750° C., preferably higher than orequal to 150° C. and lower than or equal to 450° C., more preferablyhigher than or equal to 200° C. and lower than or equal to 350° C., theoxide semiconductor film can be a CAAC-OS film.

For the deposition of the CAAC-OS film to be described later, thefollowing conditions are preferably used.

By suppressing entry of impurities into the CAAC-OS film during thedeposition, the crystal state can be prevented from being broken by theimpurities. For example, the concentration of impurities (e.g.,hydrogen, water, carbon dioxide, or nitrogen) which exist in adeposition chamber may be reduced. Furthermore, the concentration ofimpurities in a deposition gas may be reduced. Specifically, adeposition gas whose dew point is −80° C. or lower, preferably −100° C.or lower is used.

Furthermore, it is preferable that the proportion of oxygen in thedeposition gas be increased and the power be optimized in order toreduce plasma damage at the deposition. The proportion of oxygen in thedeposition gas is higher than or equal to 30 vol %, preferably 100 vol%.

After the oxide semiconductor film is formed, dehydrogenation ordehydration may be performed by heat treatment. The temperature of theheat treatment is typically higher than or equal to 150° C. and lowerthan the strain point of the substrate, preferably higher than or equalto 250° C. and lower than or equal to 450° C., more preferably higherthan or equal to 300° C. and lower than or equal to 450° C.

The heat treatment is performed under an inert gas atmosphere containingnitrogen or a rare gas such as helium, neon, argon, xenon, or krypton.Furthermore, the heat treatment may be performed under an inert gasatmosphere first, and then under an oxygen atmosphere. It is preferablethat the above inert gas atmosphere and the above oxygen atmosphere notcontain hydrogen, water, and the like. The treatment time is from 3minutes to 24 hours.

An electric furnace, an RTA apparatus, or the like can be used for theheat treatment. With the use of an RTA apparatus, the heat treatment canbe performed at a temperature of higher than or equal to the strainpoint of the substrate if the heating time is short. Therefore, the heattreatment time can be shortened.

By forming the oxide semiconductor film while it is heated or performingheat treatment after the formation of the oxide semiconductor film, thehydrogen concentration of the oxide semiconductor film can be lower thanor equal to 5×10¹⁹ atoms/cm³, preferably lower than or equal to 1×10¹⁹atoms/cm³, further preferably lower than 5×10¹⁸ atoms/cm³, still furtherpreferably lower than or equal to 1×10¹⁸ atoms/cm³, still furtherpreferably lower than or equal to 5×10¹⁷ atoms/cm³, still furtherpreferably lower than or equal to 1×10¹⁶ atoms/cm³.

For example, in the case where an oxide semiconductor film, e.g., anIn—Ga—Zn—O_(X) (X>0) film is formed using a deposition apparatusemploying ALD, an In(CH₃)₃ gas and an O₃ gas are sequentially introducedplural times to form an InO₂ layer, a Ga(CH₃)₃ gas and an O₃ gas areintroduced at a time to form a GaO layer, and then a Zn(CH₃)₂ gas and anO₃ gas are introduced at a time to form a ZnO layer. Note that the orderof these layers is not limited to this example. A mixed compound layersuch as an InGaO₂ layer, an InZnO₂ layer, a GaInO layer, a ZnInO layer,or a GaZnO layer may be formed by mixing of these gases. Note thatalthough an H₂O gas which is obtained by bubbling with an inert gas suchas Ar may be used instead of an O₃ gas, it is preferable to use an O₃gas, which does not contain H. Instead of an In(CH₃)₃ gas, an In(C₂H₅)₃gas may be used. Instead of a Ga(CH₃)₃ gas, a Ga(C₂H₅)₃ gas may be used.Instead of a Zn(CH₃)₂ gas, a Zn(C₂H₅)₂ gas may be used.

Here, a 35-nm-thick oxide semiconductor film is formed by a sputteringmethod, a mask is formed over the oxide semiconductor film, and thenpart of the oxide semiconductor film is selectively etched. Then, afterthe mask is removed, heat treatment is performed in a mixed atmospherecontaining nitrogen and oxygen. Thus, the oxide semiconductor film 54 isformed.

When the heat treatment is performed at a temperature higher than 350°C. and lower than or equal to 650° C., preferably higher than or equalto 450° C. and lower than or equal to 600° C., it is possible to obtainan oxide semiconductor film whose proportion of CAAC, which will bedescribed later, is greater than or equal to 60% and less than 100%,preferably greater than or equal to 80% and less than 100%, furtherpreferably greater than or equal to 90% and less than 100%, stillfurther preferably greater than or equal to 95% and less than or equalto 98%. Furthermore, it is possible to obtain an oxide semiconductorfilm having a low content of hydrogen, water, and the like. That is, anoxide semiconductor film with a low impurity concentration and a lowdensity of defect states can be formed.

The insulating film 56 becomes a gate insulating film in a later step.The insulating film 56 is formed by a sputtering method, a CVD method, avacuum evaporation method, a pulsed laser deposition (PLD) method, athermal CVD method, or the like.

In the case where the insulating film 56 is formed using a silicon oxidefilm or a silicon oxynitride film, a deposition gas containing siliconand an oxidizing gas are preferably used as a source gas. Typicalexamples of the deposition gas containing silicon include silane,disilane, trisilane, and silane fluoride. As the oxidizing gas, oxygen,ozone, dinitrogen monoxide, and nitrogen dioxide can be given asexamples.

In the case where a gallium oxide film is formed as the insulating film56, an MOCVD method can be used.

In the case where a hafnium oxide film is formed as the insulating film56 by a thermal CVD method such as an MOCVD method or an ALD method, twokinds of gases, i.e., ozone (O₃) as an oxidizer and a source materialgas that is obtained by vaporizing a liquid containing a solvent and ahafnium precursor compound (hafnium alkoxide or hafnium amide such astetrakis(dimethylamide)hafnium (TDMAH)), are used. Note that thechemical formula of tetrakis(dimethylamide)hafnium is Hf[N(CH₃)₂]₄.Examples of another material liquid includetetrakis(ethylmethylamide)hafnium.

In the case where an aluminum oxide film is formed as the insulatingfilm 56 by a thermal CVD method such as an MOCVD method or an ALDmethod, two kinds of gases, i.e., H₂O as an oxidizer and a sourcematerial gas that is obtained by vaporizing liquid containing a solventand an aluminum precursor compound (e.g., trimethylaluminum (TMA)) areused. Note that the chemical formula of trimethylaluminum is Al(CH₃)₃.Examples of another material liquid include tris(dimethylamide)aluminum,triisobutylaluminum, and aluminumtris(2,2,6,6-tetramethyl-3,5-heptanedionate). Note that the ALD methodenables the insulating film 56 to have excellent coverage and smallthickness.

In the case where a silicon oxide film is formed as the insulating film56 by a thermal CVD method such as an MOCVD method or an ALD method,hexachlorodisilane is adsorbed on a deposition surface, chlorinecontained in adsorbate is removed, and radicals of an oxidizing gas(e.g., 02 or dinitrogen monoxide) are supplied to react with theadsorbate.

Here, as the insulating film 56, a silicon oxynitride film is formed bya plasma CVD method.

The buffer film 58 contains at least one of indium, zinc, titanium,aluminum, tungsten, tantalum, and molybdenum. The buffer film 58 isformed using, for example, a conductive material such as an alloycontaining any of the above metal elements, a metal oxide containing anyof the above metal elements, a metal nitride containing any of the abovemetal elements, or a metal nitride oxide containing any of the abovemetal elements.

The buffer film 58 can be formed using, for example, a tantalum nitridefilm, a titanium film, an indium tin oxide (ITO) film, an aluminum film,or an oxide semiconductor film (e.g., an IGZO film having an atomicratio of In:Ga:Zn=1:4:5).

The thickness of the buffer film 58 can be greater than or equal to 1 nmand less than or equal to 20 nm, or greater than or equal to 2 nm andless than or equal to 10 nm. In that case, a larger amount of oxygen canbe added to the buffer film 58 and the insulating film 56.

In the case where the buffer film 58 is a semiconductor or a conductor,oxygen ionized by an ion doping method, an ion implantation method,plasma treatment, or the like is likely to move toward the buffer film58. Thus, the buffer film 58 formed using a semiconductor or a conductoris preferably used because a larger amount of oxygen can be added to theinsulating film 56 through the buffer film 58.

In this embodiment, a 5-nm-thick tantalum nitride film is formed as thebuffer film 58 with a sputtering apparatus.

Examples of a method for adding the oxygen 62 to the insulating film 56through the buffer film 58 include an ion doping method, an ionimplantation method, and plasma treatment. The plasma treatment may beperformed, for example, in such a manner that the substrate is set onthe parallel-plate cathode side in a dry etching apparatus or an ashingapparatus, and an RF power is supplied so that a bias is applied to thesubstrate side. The bias application to the substrate side is preferablebecause the oxygen 62 can be efficiently introduced into the insulatingfilm 56. Since the buffer film 58 is provided over the insulating film56, damage caused to the insulating film 56 when the oxygen 62 is addedcan be relieved. Furthermore, the buffer film 58 serves as a protectivefilm for preventing oxygen from being released from the insulating film56. Thus, a larger amount of oxygen can be added to the insulating film56. Alternatively, oxygen can be added to the insulating film 56 and thevicinity of the interface between the insulating film 56 and the bufferfilm 58.

In the case where oxygen is added by plasma treatment, by making oxygenexcited by a microwave to generate high density oxygen plasma, theamount of oxygen added to the insulating film 56 can be increased.

A buffer film 59 formed by the addition of oxygen to the buffer film 58is illustrated in FIG. 3B. In some cases, part of a metal elementcontained in the buffer film 58 illustrated in FIG. 3A is oxidizedbecause of the addition of the oxygen 62. In that case, the buffer film59 illustrated in FIG. 3B includes a metal oxide containing any of metalelements (indium, zinc, titanium, aluminum, tungsten, tantalum, andmolybdenum) or a metal oxynitride containing any of the metal elements.Note that the buffer film 59 is an insulator or a semiconductor.

Next, heat treatment may be performed. The temperature of the heattreatment is typically higher than or equal to 150° C. and lower thanthe strain point of the substrate, preferably higher than or equal to200° C. and lower than or equal to 450° C., further preferably higherthan or equal to 300° C. and lower than or equal to 450° C. Through thisstep, oxygen contained in the insulating film 56 can be moved to theoxide semiconductor film 54 to reduce oxygen vacancies in the oxidesemiconductor film 54. Note that the heat treatment is not necessarilyperformed in this step, in which case oxygen contained in the insulatingfilm 56 may be moved to the oxide semiconductor film 54 by heattreatment performed later.

Next, the conductive film 61 is formed over the buffer film 59 (see FIG.3C).

A formation method of the conductive film 61 is described below. First,a conductive film is formed by a sputtering method, a vacuum evaporationmethod, a pulsed laser deposition (PLD) method, a thermal CVD method, orthe like, and then a mask is formed over the conductive film by alithography process. Then, part of the conductive film is etched usingthe mask to form the conductive film 61. After that, the mask isremoved.

Note that the conductive film 61 may be formed by an electrolyticplating method, a printing method, an inkjet method, or the like insteadof the above formation method.

Alternatively, a tungsten film can be formed as the conductive film withthe use of a deposition apparatus employing ALD. In that case, a WF₆ gasand a B₂H₆ gas are sequentially introduced more than once to form aninitial tungsten film, and then a WF₆ gas and an H₂ gas are introducedat a time, so that a tungsten film is formed. Note that an SiH₄ gas maybe used instead of a B₂H₆ gas.

Next, as illustrated in FIG. 3D, the insulating film 56 and the bufferfilm 59 are etched using the conductive film 61 as a mask to form theinsulating film 57 and the buffer film 60.

Subsequently, as illustrated in FIG. 4A, an impurity element 63 is addedto the oxide semiconductor film 54 using the conductive film 61 as amask. As a result, the impurity element is added to an exposed portionof the oxide semiconductor film 54. Because of damages due to theaddition of the impurity element 63, defects typified by oxygenvacancies are formed in the oxide semiconductor film 54. Note thatdepending on the impurity element used, the impurity element formsoxygen vacancies in the oxide semiconductor film 54 and then is releasedwithout remaining in the oxide semiconductor film 54. Here, theexpression “adding an impurity element to an oxide semiconductor film”also includes such a case.

The impurity element 63 is added by, for example, an ion doping method,an ion implantation method, or a plasma treatment method. For the plasmatreatment method, plasma is generated in a gas atmosphere containing theimpurity element to be added, and ions of the impurity elementaccelerated by plasma treatment are made to collide with the oxidesemiconductor film 54, whereby oxygen vacancies can be formed in theoxide semiconductor film 54. A dry etching apparatus, a plasma CVDapparatus, a high-density plasma CVD apparatus using microwaves, or thelike can be used to generate the plasma. For performing plasmatreatment, the substrate 51 may be set to a parallel plate on thecathode side and an RF power may be supplied so that a bias is appliedto the substrate 51 side. As the RF power, for example, power densitycan be greater than or equal to 0.1 W/cm² and less than or equal to 2W/cm². Consequently, the amount of impurity elements added to the oxidesemiconductor film 54 can be increased and more oxygen vacancies can beformed in the oxide semiconductor film 54.

Note that, as a source gas of the impurity element 63, one or more ofB₂H₆, PH₃, CH₄, N₂, NH₃, AlH₃, AlCl₃, SiH₄, Si₂H₆, F₂, HF, Hz, and arare gas can be used. Alternatively, one or more of B₂H₆, PH₃, N₂, NH₃,AlH₃, AlCl₃, F₂, HF, and H₂ which are diluted with a rare gas can beused. By addition of the impurity element 63 to the oxide semiconductorfilm 54 using one or more of B₂H₆, PH₃, N₂, NH₃, AlH₃, AlCl₃, F₂, HF,and H₂ which are diluted with a rare gas, the rare gas and one or moreof hydrogen, boron, carbon, nitrogen, fluorine, aluminum, silicon,phosphorus, and chlorine can be added at a time to the oxidesemiconductor film 54.

Alternatively, after a rare gas is added to the oxide semiconductor film54, at least one of B₂H₆, PH₃, CH₄, N₂, NH₃, AlH₃, AlCl₃, SiH₄, Si₂H₆,F₂, HF, and H₂ may be added to the oxide semiconductor film 54.

Further alternatively, after one or more of B₂H₆, PH₃, CH₄, N₂, NH₃,AlH₃, AlCl₃, SiH₄, Si₂H₆, F₂, HF, and H₂ is added to the oxidesemiconductor film 54, a rare gas may be added to the oxidesemiconductor film 54.

In the case where an ion doping method or an ion implantation method isused, implantation conditions such as acceleration voltage and a dosemay be appropriately set. For example, in the case where argon is addedby an ion implantation method, the acceleration voltage is set to 10 kVand the dose is set to greater than or equal to 1×10¹³ ions/cm² and lessthan or equal to 1×10¹⁶ ions/cm², e.g., 1×10¹⁴ ions/cm². In the casewhere a phosphorus ion is added by an ion implantation method, theacceleration voltage is set to 30 kV and the dose is set to greater thanor equal to 1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ ions/cm²,e.g., 1×10¹⁵ ions/cm².

Note that oxygen vacancies may be formed in the oxide semiconductor film54 by, instead of the addition of the impurity element 63, irradiatingthe oxide semiconductor film 54 with ultraviolet light or the like.Alternatively, oxygen vacancies may be formed in the oxide semiconductorfilm 54 by irradiating the oxide semiconductor film 54 with laser.

Note that if the impurity element 63 is added with the conductive film61 being exposed, part of the conductive film 61 is peeled off andattached to a side surface of the insulating film 57 in some cases. Thisresults in an increase in the leakage current of the transistor.Accordingly, the top surface of the conductive film 61 is covered with amask when the impurity element 63 is added to the oxide semiconductorfilm 54, in which case attachment of part of the conductive film 61 tothe side surface of the insulating film 57 can be prevented.

Next, as illustrated in FIG. 4B, an insulating film 64 containinghydrogen is formed over the oxide semiconductor film 54, the insulatingfilm 57, the buffer film 60, and the conductive film 61. The insulatingfilm 64 containing hydrogen is formed by a sputtering method, a CVDmethod, a vacuum evaporation method, a pulsed laser deposition (PLD)method, or the like. When an atomic layer deposition (ALD) method isused for forming the insulating film 64 containing hydrogen, theinsulating film 64 containing hydrogen excellent in step coverage can beobtained.

The insulating film 64 contains hydrogen. Thus, when the oxidesemiconductor film 54 is in contact with the insulating film 64 at aregion to which the impurity element is added, hydrogen contained in theinsulating film 64 is moved to the region to which the impurity elementis added. As a result, the oxide semiconductor film 55 that includes thefirst region 55 a to which the impurity element is not added and thesecond regions 55 b and 55 c containing the impurity element andhydrogen is formed. Note that hydrogen contained in the insulating film64 is diffused into part of the oxide semiconductor film 55 through partof the insulating film 57. Thus, part of the second regions 55 b and 55c may overlap with the insulating film 57. Through the above steps, thesecond regions 55 b and 55 c that overlap with part of the conductivefilm 61 can be formed.

The second regions 55 b and 55 c contain hydrogen and oxygen vacanciesformed by the addition of the impurity element. The second regions 55 band 55 c have high conductivity because of the interaction between theoxygen vacancies and hydrogen. That is, the second regions 55 b and 55 care low-resistance regions.

Next, heat treatment may be performed. The temperature of the heattreatment is typically higher than or equal to 150° C. and lower thanthe strain point of the substrate, preferably higher than or equal to200° C. and lower than or equal to 450° C., further preferably higherthan or equal to 300° C. and lower than or equal to 450° C. The heattreatment further increases the conductivity of the second regions 55 band 55 c. In addition, the heat treatment can move oxygen contained inthe insulating film 57 to the oxide semiconductor film 55.

Then, an insulating film to be the insulating film 67 having openingsmay be formed over the insulating film 64 containing hydrogen. Theinsulating film can reduce parasitic capacitance between the conductivefilm 61 and the pair of conductive films 68 and 69 to be formed later.

Subsequently, the insulating film 64 containing hydrogen is partlyetched to form the insulating film 65 having openings, so that thesecond regions 55 b and 55 c are partly exposed. After that, the pair ofconductive films 68 and 69 is formed. Next, the insulating film 79 isformed over the insulating film 67 and the pair of conductive films 68and 69 (see FIG. 4C).

The pair of conductive films 68 and 69 can be formed by a method similarto that of the conductive film 61 as appropriate. The insulating film 79can be formed in a manner similar to that of the insulating film 53 or56.

Through the above-described steps, the transistor illustrated in FIG. 1Acan be fabricated.

In this embodiment, oxygen is added to the insulating film through thebuffer film and oxygen contained in the insulating film is moved to theoxide semiconductor film; thus, oxygen vacancies in the oxidesemiconductor film can be reduced. Then, an impurity element is added tothe oxide semiconductor film using the conductive film that has afunction of a gate electrode as a mask. In the oxide semiconductor film,a region overlapping with the conductive film that has a function of agate electrode has a function of a channel region, whereas regions towhich the impurity element is added have functions of a source regionand a drain region. Thus, in any of the transistors described in thisembodiment, the channel region contains a small number of oxygenvacancies and the impurity element is not added to the channel region.In contrast, the impurity element is added to the source and drainregions; thus, the source and drain regions have low resistivity. Fromthe above, according to this embodiment, a normally-off transistorhaving high on-state current can be fabricated. Furthermore, a highlyreliable transistor can be fabricated.

In addition, since a region with small variation in resistivity can beformed in the transistors described in this embodiment, the on-statecurrent can be higher than that of a conventional transistor, andvariations among transistors can be reduced.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 2

In this embodiment, structures and manufacturing methods ofsemiconductor devices that are different from those described inEmbodiment 1 will be described with reference to FIGS. 5A to 5D, FIGS.6A to 6D, FIGS. 7A to 7D, FIGS. 8A to 8D, and FIGS. 9A to 9C.

Transistors described in this embodiment are different from those inEmbodiment 1 in that an edge of the buffer film 60 extends beyond theconductive film 61.

<Structure 1 of Semiconductor Device>

Structures of transistors included in semiconductor devices will bedescribed with reference to FIGS. 5A to 5D.

A transistor illustrated in FIG. 5A includes the oxide semiconductorfilm 55, the insulating film 57 in contact with the oxide semiconductorfilm 55, the buffer film 60 over the insulating film 57, and theconductive film 61 in contact with the buffer film 60 and overlaps withthe oxide semiconductor film 55. The edge of the buffer film 60 extendsbeyond the conductive film 61. This means that the area of the topsurface of the buffer film 60 is larger than the area of the top surfaceof the conductive film 61. Furthermore, a side surface of the insulatingfilm 57 is substantially aligned with the side surface of the bufferfilm 60.

Other components are the same as those of the transistors described inEmbodiment 1; thus, detailed descriptions thereof are omitted here.

In methods for forming a transistor described in this embodiment, oxygenis added to an insulating film (insulating film to be the insulatingfilm 57 in FIGS. 5A to 5D) in contact with an oxide semiconductor film(oxide semiconductor film to be the oxide semiconductor film 55 in FIGS.5A to 5D) through an island-shaped buffer film (buffer film to be thebuffer film 60 in FIGS. 5A to 5D) that covers at least a channel region.As a result, the insulating film contains excess oxygen. Then, excessoxygen in the insulating film is moved to the oxide semiconductor filmby heat treatment, whereby at least oxygen vacancies in the channelregion can be reduced. In contrast, a source region and a drain regionmay contain a large number of oxygen vacancies because the resistivityof the source and drain regions is preferably low. For this reason, whenoxygen is added to the insulating film through the island-shaped bufferfilm that covers at least the channel region, and oxygen contained inthe insulating film is selectively added to the oxide semiconductor film55, a transistor with low off-state current and high on-state current,that is, a transistor with excellent electric characteristics can befabricated.

In the case where the buffer film 60 of the transistor illustrated inFIG. 5A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have anoverlap region Lov overlapping with part of the conductive film 61 as ina transistor illustrated in FIG. 5B.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, the third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and the third region 55e may be provided between the first region 55 a and the second region 55c as in a transistor illustrated in FIG. 5C.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 and may have offsetregions Loff as in a transistor illustrated in FIG. 5D.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 5A to 5D is formed using a semiconductor film, thebuffer film 60 and the conductive film 61 collectively serve as a gateelectrode.

Thus, in the case where the buffer film 60 in FIG. 5A is formed using asemiconductor film, the interfaces of the first region 55 a with thesecond regions 55 b and 55 c may be substantially aligned with the edgesof the buffer film 60.

In the case where the buffer film 60 in FIG. 5B is formed using asemiconductor film, the overlap regions Lov are regions where the secondregions 55 b and 55 c overlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 5D is formed using asemiconductor film, the channel length is the width of a region which isin the first region 55 a and overlaps with the buffer film 60.

<Structure 2 of Semiconductor Device>

Structures of transistors included in semiconductor devices will bedescribed with reference to FIGS. 6A to 6D.

Transistors illustrated in FIGS. 6A to 6D are different from those inFIGS. 5A to 5D in that the insulating film 56 positioned between theoxide semiconductor film 55 and the buffer film 60 is not etched. Inother words, the insulating film 56 covers a surface of the oxidesemiconductor film 55 on the buffer film 60 side.

Other components are the same as those of the transistors described inEmbodiment 1; thus, detailed descriptions thereof are omitted here.

The insulating film 56 preferably has a thickness such that an impurityelement can be moved to the oxide semiconductor film 55 through theinsulating film 56. The thickness of the insulating film 56 can betypically greater than or equal to 5 nm and less than or equal to 100 nmand preferably greater than or equal to 10 nm and less than or equal to30 nm.

In the case where the buffer film 60 of the transistor illustrated inFIG. 6A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have anoverlap region Lov overlapping with part of the conductive film 61 as ina transistor illustrated in FIG. 6B.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, the third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and the third region 55e may be provided between the first region 55 a and the second region 55c as in a transistor illustrated in FIG. 6C.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 and may have offsetregions Loff as in a transistor illustrated in FIG. 6D.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 6A to 6D is formed using a semiconductor film, thebuffer film 60 and the conductive film 61 collectively serve as a gateelectrode.

Thus, in the case where the buffer film 60 in FIG. 6A is formed using asemiconductor film, the interfaces of the first region 55 a with thesecond regions 55 b and 55 c may be substantially aligned with the edgesof the buffer film 60.

In the case where the buffer film 60 in FIG. 6B is formed using asemiconductor film, the overlap regions Lov are regions where the secondregions 55 b and 55 c overlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 6D is formed using asemiconductor film, the channel length is the width of a region which isin the first region 55 a and overlaps with the buffer film 60.

<Method 1 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 5Awill be described with reference to FIGS. 7A to 7D and FIGS. 8A to 8C.

In a manner similar to that described in Embodiment 1, the insulatingfilm 53 over the substrate 51, the oxide semiconductor film 54 over theinsulating film 53, the insulating film 56 over the oxide semiconductorfilm 54, and a buffer film 58 a over the insulating film 56 are formedas illustrated in FIG. 7A. The buffer film 58 a is etched and a sidesurface of the buffer film 58 a overlaps with the oxide semiconductorfilm 54.

The buffer film 58 a is provided in a region overlapping with a regionwhere the conductive film 61 having a function of a gate electrode is tobe formed. In other words, the buffer film 58 a is provided in a regionoverlapping with a region to be a channel region in the oxidesemiconductor film 55 or in a region overlapping with a region which isin the insulating film 56 and serves as a gate insulating film. Notethat the region which is in the insulating film 56 and serves as a gateinsulating film includes at least a region between the oxidesemiconductor film 54 and the conductive film 61.

Next, in a manner similar to that described in Embodiment 1, the oxygen62 is added to the buffer film 58 a as illustrated in FIG. 7B. In theinsulating film 56, a surface of a region to which the oxygen 62 isdirectly added is etched by several nanometers, resulting in release ofpart of the added oxygen. Consequently, the amount of oxygen added tothe insulating film 56 might be insufficient. Meanwhile, in theinsulating film 56, oxygen sufficient to reduce oxygen vacancies in theregion to be the channel region in the oxide semiconductor film 55 canbe added through the buffer film 58 a, because the buffer film 58 aserves as a protective film for the etching of the surface of theinsulating film 56 by several nanometers.

In addition, since oxygen is added to the insulating film 56 through thebuffer film 58 a, damage to a region of the insulating film 56, whichserves as a gate insulating film, can be reduced while excess oxygen isadded to the insulating film 56.

Oxygen is added to the insulating film 56 through the island-shapedbuffer film 58 a provided in the region overlapping with the region tobe the channel region in the oxide semiconductor film 55. As a result,oxygen contained in the insulating film 56 can be selectively added tothe region to be the channel region in the oxide semiconductor film 55.

The buffer film 58 a to which the oxygen 62 is added becomes the bufferfilm 60 formed of a metal oxide containing any of metal elements(indium, zinc, titanium, aluminum, tungsten, tantalum, and molybdenum)or a metal oxynitride containing any of the metal elements (see FIG.7C). Note that the buffer film 60 is an insulator or a semiconductor.

Next, heat treatment may be performed in a manner similar to that inEmbodiment 1. Through this step, oxygen contained in the insulating film56 can be moved to the oxide semiconductor film 54 to reduce oxygenvacancies in the oxide semiconductor film 54. Note that the heattreatment is not necessarily performed in this step, in which caseoxygen contained in the insulating film 56 may be moved to the oxidesemiconductor film 54 by heat treatment performed later.

Then, in a manner similar to that described in Embodiment 1, theconductive film 61 is formed over the buffer film 60 as illustrated inFIG. 7D.

Next, as illustrated in FIG. 8A, the insulating film 56 is etched usingthe buffer film 60 and the conductive film 61 as a mask to form theinsulating film 57.

Subsequently, in a manner similar to that described in Embodiment 1, theimpurity element 63 is added to the oxide semiconductor film 54 usingthe buffer film 60 and the conductive film 61 as a mask, as illustratedin FIG. 8B.

Next, heat treatment may be performed in a manner similar to thatdescribed in Embodiment 1 to increase the conductivity of regions to bethe second regions 55 b and 55 c. The heat treatment can move oxygencontained in the insulating film 57 to the oxide semiconductor film 54.

Next, in a manner similar to that described in Embodiment 1, theinsulating film 64 containing hydrogen is formed over the oxidesemiconductor film 54, the insulating film 57, the buffer film 60, andthe conductive film 61 as illustrated in FIG. 8C. As a result, the oxidesemiconductor film 55 that includes the first region 55 a to which theimpurity element is not added and the second regions 55 b and 55 ccontaining the impurity element and hydrogen is formed.

Then, in a manner similar to that described in Embodiment 1, aninsulating film to be the insulating film 67 having openings may beformed over the insulating film 64 containing hydrogen. Subsequently,the insulating film 64 containing hydrogen is partly etched to form theinsulating film 65 having openings, so that the second regions 55 b and55 c are partly exposed. After that, the pair of conductive films 68 and69 may be formed. Next, the insulating film 79 may be formed over theinsulating film 67 and the pair of conductive films 68 and 69 (see FIG.8D).

Through the above-described steps, the transistor illustrated in FIG. 5Acan be fabricated.

<Method 2 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 6Awill be described with reference to FIGS. 7A to 7D and FIGS. 9A to 9C.

Through the steps described in <Method 1 for Manufacturing SemiconductorDevice> and in FIGS. 7A to 7D, the insulating film 53 over the substrate51, the oxide semiconductor film 54 over the insulating film 53, theinsulating film 56 over the oxide semiconductor film 54, the buffer film60 over the insulating film 56, and the conductive film 61 over thebuffer film 60 are formed as illustrated in FIG. 9A.

Subsequently, as illustrated in FIG. 9A, the impurity element 63 isadded to the oxide semiconductor film 54 through the insulating film 56,using the buffer film 60 and the conductive film 61 as a mask.

Next, as illustrated in FIG. 9B, the insulating film 64 containinghydrogen is formed over the insulating film 56, the buffer film 60, andthe conductive film 61. As a result, the oxide semiconductor film 55that includes the first region 55 a to which the impurity element is notadded and the second regions 55 b and 55 c containing the impurityelement and hydrogen is formed.

Then, in a manner similar to that described in Embodiment 1, aninsulating film to be the insulating film 67 having openings may beformed over the insulating film 64 containing hydrogen. Subsequently,the insulating film 64 containing hydrogen is partly etched to form theinsulating film 65 having openings, so that the second regions 55 b and55 c are partly exposed. After that, the pair of conductive films 68 and69 may be formed. Next, the insulating film 79 may be formed over theinsulating film 67 and the pair of conductive films 68 and 69 (see FIG.9C).

Through the above-described steps, the transistor illustrated in FIG. 6Acan be fabricated.

In this embodiment, oxygen is added to the insulating film through thebuffer film and oxygen contained in the insulating film is moved to theoxide semiconductor film; thus, oxygen vacancies in the oxidesemiconductor film can be reduced. Then, an impurity element is added tothe oxide semiconductor film using the conductive film that has afunction of a gate electrode as a mask. In the oxide semiconductor film,a region overlapping with the conductive film that has a function of agate electrode has a function of a channel region, whereas regions towhich the impurity element is added have functions of a source regionand a drain region. Thus, in any of the transistors described in thisembodiment, the channel region contains a small number of oxygenvacancies and the impurity element is not added to the channel region.In contrast, the impurity element is added to the source and drainregions; thus, the source and drain regions have low resistivity. Fromthe above, according to this embodiment, a normally-off transistorhaving high on-state current can be fabricated. Furthermore, a highlyreliable transistor can be fabricated.

Furthermore, in this embodiment, since oxygen can be selectively addedto the insulating film overlapping with a channel region in the oxidesemiconductor film, oxygen vacancies in the channel region areselectively reduced. Consequently, according to this embodiment, anormally-off transistor having high on-state current can be fabricated.Furthermore, a highly reliable transistor can be fabricated.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 3

In this embodiment, structures and manufacturing methods ofsemiconductor devices that are different from those described inEmbodiments 1 and 2 will be described with reference to FIGS. 3A to 3D,FIGS. 7A to 7D, FIGS. 10A to 10D, FIGS. 11A to 11D, FIGS. 12A to 12D,and FIGS. 13A to 13C.

Transistors described in this embodiment are different from thosedescribed in Embodiments 1 and 2 in that an insulating film containinghydrogen is not formed over the oxide semiconductor film 55 or theinsulating film 57.

<Structure 1 of Semiconductor Device>

Structures of transistors included in semiconductor devices will bedescribed with reference to FIGS. 10A to 10D.

A transistor illustrated in FIG. 10A includes the oxide semiconductorfilm 55, the insulating film 57 in contact with the oxide semiconductorfilm 55, the buffer film 60 over the insulating film 57, and theconductive film 61 in contact with the buffer film 60 and overlaps withthe oxide semiconductor film 55.

The oxide semiconductor film 55 included in the transistor is formedover the insulating film 53 over the substrate 51. In addition, theinsulating film 67 may be provided in contact with the second regions 55b and 55 c of the oxide semiconductor film 55, and the pair ofconductive films 68 and 69 may be provided in contact with the secondregions 55 b and 55 c of the oxide semiconductor film 55 in openings inthe insulating film 67. Moreover, an insulating film 79 may be providedover the insulating film 67 and the pair of conductive films 68 and 69.

Other components are the same as those of the transistors described inEmbodiment 1; thus, detailed descriptions thereof are omitted here.

In the case where the buffer film 60 of the transistor illustrated inFIG. 10A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have anoverlap region Lov overlapping with part of the conductive film 61 as ina transistor illustrated in FIG. 10B.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, the third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and the third region 55e may be provided between the first region 55 a and the second region 55c as in a transistor illustrated in FIG. 10C.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 and may have offsetregions Loff as in a transistor illustrated in FIG. 10D.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 10A to 10D is formed using a semiconductor film,the buffer film 60 and the conductive film 61 collectively serve as agate electrode.

Thus, in the case where the buffer film 60 in FIG. 10A is formed using asemiconductor film, the interfaces of the first region 55 a with thesecond regions 55 b and 55 c may be substantially aligned with the edgesof the buffer film 60.

In the case where the buffer film 60 in FIG. 10B is formed using asemiconductor film, the overlap regions Lov are regions where the secondregions 55 b and 55 c overlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 10D is formed using asemiconductor film, the channel length is the width of a region which isin the first region 55 a and overlaps with the buffer film 60.

<Structure 2 of Semiconductor Device>

Structures of transistors included in semiconductor devices will bedescribed with reference to FIGS. 11A to 11D.

A transistor illustrated in FIG. 11A is different from that in FIG. 10Ain that an edge of the buffer film 60 extends beyond the conductive film61. This means that the area of the top surface of the buffer film 60 islarger than the area of the top surface of the conductive film 61.Furthermore, a side surface of the insulating film 57 is substantiallyaligned with the side surface of the buffer film 60.

Other components are the same as those of the transistor illustrated inFIG. 10A; thus, detailed descriptions thereof are omitted here.

In the case where the buffer film 60 of the transistor illustrated inFIG. 11A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have anoverlap region Lov overlapping with part of the conductive film 61 as ina transistor illustrated in FIG. 11B.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, the third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and the third region 55e may be provided between the first region 55 a and the second region 55c as in a transistor illustrated in FIG. 11C.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 and may have offsetregions Loff as in a transistor illustrated in FIG. 11D.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 11A to 11D is a semiconductor, the buffer film 60and the conductive film 61 collectively serve as a gate electrode.

Thus, in the case where the buffer film 60 in FIG. 11A is asemiconductor, the interfaces of the first region 55 a with the secondregions 55 b and 55 c may be substantially aligned with the edges of thebuffer film 60.

In the case where the buffer film 60 in FIG. 11B is a semiconductor, theoverlap regions Lov are regions where the second regions 55 b and 55 coverlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 11D is a semiconductor, thechannel length is the width of a region which is in the first region 55a and overlaps with the buffer film 60.

<Structure 3 of Semiconductor Device>

Structures of transistors included in semiconductor devices will bedescribed with reference to FIGS. 12A to 12D.

A transistor illustrated in FIG. 12A is different from the transistorsin FIGS. 11A to 11D in that the insulating film 56 positioned betweenthe oxide semiconductor film 55 and the buffer film 60 is not etched. Inother words, the insulating film 56 covers a surface of the oxidesemiconductor film 55 on the buffer film 60 side.

Other components are the same as those of the transistor illustrated inFIG. 11A; thus, detailed descriptions thereof are omitted here.

In the case where the buffer film 60 of the transistor illustrated inFIG. 12A is formed using an insulating film, the interfaces of the firstregion 55 a with the second regions 55 b and 55 c may be substantiallyaligned with edges of the conductive film 61.

Alternatively, in the case where the buffer film 60 is formed using aninsulating film, the second regions 55 b and 55 c may each have anoverlap region Lov overlapping with part of the conductive film 61 as ina transistor illustrated in FIG. 12B.

Further alternatively, in the case where the buffer film 60 is formedusing an insulating film, the third region 55 d may be provided betweenthe first region 55 a and the second region 55 b and the third region 55e may be provided between the first region 55 a and the second region 55c as in a transistor illustrated in FIG. 12C.

Still further alternatively, in the case where the buffer film 60 isformed using an insulating film, the second regions 55 b and 55 c do notnecessarily overlap with the conductive film 61 and may have offsetregions Loff as in a transistor illustrated in FIG. 12D.

In the case where the buffer film 60 in each of the transistorsillustrated in FIGS. 12A to 12D is a semiconductor, the buffer film 60and the conductive film 61 collectively serve as a gate electrode.

Thus, in the case where the buffer film 60 in FIG. 12A is asemiconductor, the interfaces of the first region 55 a with the secondregions 55 b and 55 c may be substantially aligned with the edges of thebuffer film 60.

In the case where the buffer film 60 in FIG. 12B is a semiconductor, theoverlap regions Lov are regions where the second regions 55 b and 55 coverlap with at least the buffer film 60.

In the case where the buffer film 60 in FIG. 12D is a semiconductor, thechannel length is the width of a region which is in the first region 55a and overlaps with the buffer film 60.

<Method 1 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 10Awill be described with reference to FIGS. 3A to 3D and FIGS. 13A to 13C.

As described in <Method for Manufacturing Semiconductor Device> inEmbodiment 1, through the steps in FIGS. 3A to 3D, the insulating film53 over the substrate 51, the oxide semiconductor film 54 over theinsulating film 53, the insulating film 57 over the oxide semiconductorfilm 54, the buffer film 60 over the insulating film 57, and theconductive film 61 over the buffer film 60 are formed.

Then, as illustrated in FIG. 13A, the impurity element 63 is added tothe oxide semiconductor film 54, using the buffer film 60 and theconductive film 61 as a mask. Here, as the impurity element 63, hydrogenand one or more of a rare gas, boron, nitrogen, fluorine, aluminum, andphosphorus are added concurrently or separately. As a result, the oxidesemiconductor film 55 that includes the first region 55 a to which theimpurity element is not added and the second regions 55 b and 55 ccontaining the impurity element and hydrogen can be formed asillustrated in FIG. 13B.

Next, the insulating film 67 having openings may be formed over theoxide semiconductor film 55, the insulating film 57, the buffer film 60,and the conductive film 61. Then, the pair of conductive films 68 and 69may be formed. After that, the insulating film 79 may be formed over theinsulating film 67 and the pair of conductive films 68 and 69 (see FIG.13C).

Through the above-described steps, the transistor illustrated in FIG.10A can be fabricated.

<Method 2 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 11Awill be described with reference to FIGS. 7A to 7D and FIGS. 8A and 8B.

As described in <Method 1 for Manufacturing Semiconductor Device> inEmbodiment 2, through the steps in FIGS. 7A to 7D and FIG. 8A, theinsulating film 53 over the substrate 51, the oxide semiconductor film54 over the insulating film 53, the insulating film 57 over the oxidesemiconductor film 54, the buffer film 60 over the insulating film 57,and the conductive film 61 over the buffer film 60 are formed.

Then, as illustrated in FIG. 8B, the impurity element 63 is added to theoxide semiconductor film 54, using the buffer film 60 and the conductivefilm 61 as a mask. Here, as the impurity element 63, hydrogen and one ormore of a rare gas, boron, nitrogen, fluorine, aluminum, and phosphorusare added concurrently or separately. As a result, the oxidesemiconductor film 55 that includes the first region 55 a to which theimpurity element is not added and the second regions 55 b and 55 ccontaining the impurity element and hydrogen can be formed asillustrated in FIG. 11A.

Next, the insulating film 67 having openings may be formed over theoxide semiconductor film 55, the insulating film 57, the buffer film 60,and the conductive film 61. Then, the pair of conductive films 68 and 69may be formed. After that, the insulating film 79 may be formed over theinsulating film 67 and the pair of conductive films 68 and 69.

Through the above-described steps, the transistor illustrated in FIG.11A can be fabricated.

<Method 3 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 12Awill be described with reference to FIGS. 7A to 7D and FIG. 9A.

As described in <Method 1 for Manufacturing Semiconductor Device> inEmbodiment 2, through the steps in FIGS. 7A to 7D, the insulating film53 over the substrate 51, the oxide semiconductor film 54 over theinsulating film 53, the insulating film 56 over the oxide semiconductorfilm 54, the buffer film 60 over the insulating film 56, and theconductive film 61 over the buffer film 60 are formed.

Then, as illustrated in FIG. 9A, the impurity element 63 is added to theoxide semiconductor film 54, using the buffer film 60 and the conductivefilm 61 as a mask. Here, as the impurity element 63, hydrogen and one ormore of a rare gas, boron, nitrogen, fluorine, aluminum, and phosphorusare added concurrently or separately. As a result, the oxidesemiconductor film 55 that includes the first region 55 a to which theimpurity element is not added and the second regions 55 b and 55 ccontaining the impurity element and hydrogen can be formed asillustrated in FIG. 12A.

Next, the insulating film 67 having openings may be formed over theinsulating film 56, the buffer film 60, and the conductive film 61.Openings may be formed in the insulating film 56 to expose part of thesecond regions 55 b and 55 c in the oxide semiconductor film 55. Then,the pair of conductive films 68 and 69 may be formed. After that, theinsulating film 79 may be formed over the insulating film 67 and thepair of conductive films 68 and 69.

Through the above-described steps, the transistor illustrated in FIG.12A can be fabricated.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 4

A method for adding excess oxygen to the insulating film 53 inEmbodiments 1 to 3 will be described with reference to FIGS. 14A to 14C.

As illustrated in FIG. 14A, the insulating film 53 is formed over thesubstrate 51 and a buffer film 81 is formed over the insulating film 53.Then, in a manner similar to that described in Embodiment 1, oxygen 82is added to the buffer film 81. Accordingly, an insulating film 53 a towhich oxygen is added and a buffer film 83 to which oxygen is added canbe formed as illustrated in FIG. 14B.

The buffer film 81 can be formed as appropriate using a material and aformation method similar to those of the buffer film 58 described inEmbodiment 1. The buffer film 83 is formed in a manner similar to thatof the buffer film 59 described in Embodiment 1.

Then, the buffer film 83 may be removed as illustrated in FIG. 14C.Furthermore, an oxide semiconductor film may be formed over theinsulating film 53 a to which oxygen is added. As a result, oxygencontained in the insulating film 53 a can be moved to the oxidesemiconductor film by heat treatment to be performed later and oxygenvacancies in the oxide semiconductor film can be reduced.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 5

In this embodiment, transistors having structures applicable toEmbodiments 1 to 4 and methods for manufacturing the transistors will bedescribed with reference to FIGS. 15A to 15D, FIGS. 16A to 16D, FIGS.17A to 17C, and FIGS. 18A to 18C. Here, the description will be madewith reference to Embodiment 1.

<Structure of Semiconductor Device>

FIGS. 15A to 15D are cross-sectional views of top-gate self-alignedtransistors that are examples of a transistor in a semiconductor device.Transistors described in this embodiment are different from thosedescribed in Embodiment 1 in that a gate insulating film has astacked-layer structure.

A transistor illustrated in FIG. 15A includes the oxide semiconductorfilm 55, a gate insulating film in contact with the oxide semiconductorfilm 55, and the conductive film 61 in contact with the gate insulatingfilm and overlapping with the oxide semiconductor film 55. In the gateinsulating film, the insulating film 57 and the buffer film 60 arestacked in this order from the oxide semiconductor film 55 side. Thatis, the insulating film 57 is in contact with the oxide semiconductorfilm 55. The buffer film 60 is provided between the insulating film 57and the conductive film 61. Although not shown in the drawing here,another insulating film may be provided between the insulating film 57and the buffer film 60. Alternatively, another insulating film may beprovided between the buffer film 60 and the conductive film 61.

As the insulating film 57, the insulating film 57 described inEmbodiment 1 can be used as appropriate. Note that the insulating film57 is preferably formed using a material that is unlikely to form adefect state at the interface with the oxide semiconductor film 55.

As the buffer film 60, the buffer film 60 described in Embodiment 1 canbe used as appropriate. Note that the buffer film 60 is preferablyformed using a material that is etched isotropically.

Other components are the same as those of the transistors described inEmbodiment 1; thus, detailed descriptions thereof are omitted here.

In each of the transistors described in this embodiment, a side surfaceof the buffer film 60 has a depressed portion. Specifically, the bufferfilm 60 has a region with a smaller width than that of the conductivefilm 61. In other words, the side surface of the buffer film 60 has aregion that is more on the inside than a side surface of the conductivefilm 61.

The insulating film 57 preferably has a thickness that allows animpurity element to be added to the second regions 55 b and 55 c. Thethickness of insulating film 57 can be typically greater than or equalto 5 nm and less than or equal to 100 nm and preferably greater than orequal to 10 nm and less than or equal to 30 nm.

The buffer film 60 preferably has a thickness with which the buffer film60 can serve as a gate insulating film with the insulating film 57.

In addition, in each of the transistors described in this embodiment,the second regions 55 b and 55 c in the oxide semiconductor film 55 eachhave a region overlapping with part of the conductive film 61.

FIGS. 15B to 15D are each an enlarged cross-sectional view of the oxidesemiconductor film 55 and its surroundings in the transistor illustratedin FIG. 15A.

As illustrated in FIG. 15B, part of or the entire side surface of thebuffer film 60 is positioned more on the inside than a side surface ofthe conductive film 61. In addition, the width of the insulating film 57is smaller than that of the conductive film 61. Moreover, the secondregions 55 b and 55 c in the oxide semiconductor film 55 each have aregion overlapping with part of the conductive film 61. Such a regioncan be referred to as an overlap region Lov.

Alternatively, as illustrated in FIG. 15C, part of or the entire sidesurface of the buffer film 60 is positioned more on the inside than aside surface of the conductive film 61. In addition, the width of theinsulating film 57 is larger than that of the conductive film 61.Moreover, the second regions 55 b and 55 c in the oxide semiconductorfilm 55 each have the overlap region Lov overlapping with part of theconductive film 61.

Alternatively, as illustrated in FIG. 15D, part of or the entire sidesurface of the buffer film 60 is positioned more on the inside than aside surface of the conductive film 61. In addition, the width of theinsulating film 57 is substantially the same as that of the conductivefilm 61. Moreover, the second regions 55 b and 55 c in the oxidesemiconductor film 55 each have the overlap region Lov overlapping withpart of the conductive film 61.

Note that the length of the overlap region Lov is preferably less than20%, 10%, 5%, or 2% of a channel length L.

The insulating film 57 is formed using a material that is unlikely toform a defect state at the interface with the oxide semiconductor film55. Since the insulating film 57 is in contact with the oxidesemiconductor film 55, the density of defect states at the interfacebetween the oxide semiconductor film 55 and the insulating film 57 canbe reduced. The buffer film 60 is formed using a material that can beetched isotropically. Accordingly, the buffer film 60 having a widthsmaller than that of the conductive film 61 can be formed throughetching with the use of the conductive film 61 as a mask. The etchingrate of the buffer film 60 at an etching process may be different fromthat of the oxide semiconductor film. In that case, the buffer film 60can be etched selectively and isotropically, with the oxidesemiconductor film being exposed.

Since the insulating film 57 is thin, an impurity element can be addedto the second regions 55 b and 55 c through the insulating film 57.Furthermore, hydrogen contained in the insulating film 65 can bediffused into the second regions 55 b and 55 c. Thus, the second regions55 b and 55 c can be formed under the insulating film 57.

In each of the transistors illustrated in FIGS. 15A to 15D, a sidesurface of the buffer film 60 has a depressed portion. Thus, when animpurity element is added to the oxide semiconductor film 55 to formoxygen vacancies, the impurity element also enters the depressed portionat a side surface of a gate insulating film. Moreover, since theinsulating film 57 is thin, an impurity element is added to the oxidesemiconductor film 55 through the insulating film 57. As a result, theimpurity element is added to and oxygen vacancies are formed in a regionthat is in the oxide semiconductor film 55 and overlaps with part of theconductive film 61.

In addition, hydrogen contained in the insulating film 65 is directlydiffused or diffused through the insulating film 57 into a region of theoxide semiconductor film 55 to which the impurity element is added.

As a result, in a region that is in the oxide semiconductor film 55 andoverlaps with part of the conductive film 61, the second regions 55 band 55 c containing oxygen vacancies and hydrogen are formed.

That is, according to this embodiment, the second regions 55 b and 55 ccontaining oxygen vacancies and hydrogen are selectively formed in theoxide semiconductor film by selectively adding an impurity element tothe oxide semiconductor film utilizing the shapes of the buffer film 60and the insulating film 57, or by selectively making hydrogen diffuseinto the oxide semiconductor film utilizing the shapes of the bufferfilm 60 and the insulating film 57. As described later in Embodiment 6,hydrogen is stable in an oxygen vacancy and is unlikely to be releasedfrom an oxygen vacancy. Thus, hydrogen contained in the second regions55 b and 55 c is unlikely to be diffused into the first region 55 aserving as a channel region, whereby deterioration in electriccharacteristics of the transistor can be reduced.

When hydrogen enters an oxygen vacancy and a donor level is formed inthe vicinity of the conduction band, the conductivity is increased.Thus, the second regions 55 b and 55 c have functions of a source regionand a drain region. A region in each of the second regions 55 b and 55c, which overlaps with part of the conductive film 61, corresponds to anoverlap region Lov. Since each of the transistors described in thisembodiment has overlap regions Lov, a high-resistance region is notformed between the channel region and the source region or the drainregion. For this reason, the transistors described in this embodimenthave high on-state current. The electric characteristics of a transistorhaving high-resistance regions between the channel region and the sourceand drain regions are likely to deteriorate. In contrast, the electriccharacteristics of the transistors having the overlap regions Lov, whichare described in this embodiment, are less likely to deteriorate; thus,the transistors are highly reliable.

Furthermore, in each of the transistors described in this embodiment,the second regions 55 b and 55 c in which oxygen vacancies are formed byaddition of the impurity element contain hydrogen. This enables theresistivity of the second regions 55 b and 55 c to be reduced andvariations in the resistivity of the second regions 55 b and 55 c amongtransistors to be reduced. In other words, by addition of the impurityelement to the oxide semiconductor film for forming oxygen vacancies,the resistivity of the second regions 55 b and 55 c can be adjusted.

<Method 1 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor illustrated in FIG. 15Awill be described with reference to FIGS. 16A to 16D and FIGS. 17A to17C.

In a manner similar to that described in Embodiment 1, the insulatingfilm 53 over the substrate 51, the oxide semiconductor film 54 over theinsulating film 53, the insulating film 56 over the oxide semiconductorfilm 54, and the buffer film 58 over the insulating film 56 are formedas illustrated in FIG. 16A. Then, the oxygen 62 is added to the bufferfilm 58. As a result, more oxygen can be added to the insulating film56.

Here, a silicon oxide film is formed as the insulating film 56 and anITO film is formed as the buffer film 58.

The buffer film 59 formed by addition of oxygen to the buffer film 58 isillustrated in FIG. 16B. The conductive film 61 is formed over thebuffer film 59.

Next, as illustrated in FIG. 16C, the buffer film 59 is etched using theconductive film 61 as a mask to form the buffer film 60. Here, a wetetching method using an etchant with which the etching rate of thebuffer film 59 is higher than that of the insulating film 56 can beused. Alternatively, a dry etching method using an etching gas withwhich the etching rate of the buffer film 59 is higher than that of theinsulating film 56 and the buffer film 59 can be etched isotropicallycan be used. As a result, the buffer film 60 whose side surface has adepressed portion can be formed.

With the use of a solution containing oxalic acid as an etchant, thebuffer film 59 can be selectively etched without removing the insulatingfilm 56. In addition, the buffer film 59 can be etched isotropically. Asa result, the buffer film 60 whose side surface has a depressed portioncan be formed.

Then, as illustrated in FIG. 16D, the insulating film 56 is etched usingthe conductive film 61 as a mask to form the insulating film 57. Throughthe above steps, the insulating film 57 is formed and part of the oxidesemiconductor film 54 can be exposed. Here, it is preferable toselectively etch the insulating film 56 without etching the oxidesemiconductor film 54 in order to improve the yield. Thus, a dry etchingmethod is preferably used.

Subsequently, in a manner similar to that described in Embodiment 1, theimpurity element 63 is added to the oxide semiconductor film 54 usingthe conductive film 61 as a mask, as illustrated in FIG. 17A. As aresult, the impurity element is added to an exposed portion of the oxidesemiconductor film 54. In addition, the impurity element is added to theoxide semiconductor film 54 through the insulating film 57. Because ofdamages due to the addition of the impurity element 63, defects typifiedby oxygen vacancies are formed in the oxide semiconductor film 54.

Next, in a manner similar to that described in Embodiment 1, theinsulating film 64 containing hydrogen is formed over the oxidesemiconductor film 54, the insulating film 57, and the conductive film61 as illustrated in FIG. 17B.

The insulating film 64 contains hydrogen. Thus, when the oxidesemiconductor film 54 is in contact with the insulating film 64 at aregion to which the impurity element is added, hydrogen contained in theinsulating film 64 is moved to the region to which the impurity elementis added. As a result, the oxide semiconductor film 55 that includes thefirst region 55 a to which the impurity element is not added and thesecond regions 55 b and 55 c containing the impurity element andhydrogen is formed. Note that hydrogen contained in the insulating film64 is diffused into part of the oxide semiconductor film 55 through theinsulating film 57. Thus, part of the second regions 55 b and 55 c mayoverlap with the insulating film 57. Through the above steps, the secondregions 55 b and 55 c that overlap with part of the conductive film 61can be formed.

Next, heat treatment may be performed to increase the conductivity ofthe second regions 55 b and 55 c.

Then, as illustrated in FIG. 17C, an insulating film to be theinsulating film 67 having openings may be formed over the insulatingfilm 64 containing hydrogen. The insulating film can reduce parasiticcapacitance between the conductive film 61 and the pair of conductivefilms 68 and 69 to be formed later.

Subsequently, in a manner similar to that described in Embodiment 1, theinsulating film 64 containing hydrogen is partly etched to form theinsulating film 65 having openings, so that the second regions 55 b and55 c are partly exposed. After that, the pair of conductive films 68 and69 may be formed. Next, the insulating film 79 may be formed over theinsulating film 67 and the pair of conductive films 68 and 69.

Through the above-described steps, the transistor illustrated in FIG.15A can be fabricated.

<Method 2 for Manufacturing Semiconductor Device>

A modification example of a method for forming the insulating film 57and the buffer film 60 will be described.

In a manner similar to that described in Embodiment 1, the insulatingfilm 53 over the substrate 51, the oxide semiconductor film 54 over theinsulating film 53, the insulating film 56 over the oxide semiconductorfilm 54, the buffer film 59 over the insulating film 56, and theconductive film 61 over the buffer film 59 are formed as illustrated inFIG. 18A.

Next, as illustrated in FIG. 18B, the insulating film 56 and the bufferfilm 59 are etched using the conductive film 61 as a mask to form theinsulating film 57 and a buffer film 60 a.

It is preferable to etch the insulating film 56 and the buffer film 59selectively without etching the oxide semiconductor film 54 in order toimprove the yield. Accordingly, a dry etching method is employed here.

Next, as illustrated in FIG. 18C, the buffer film 60 a is etched to formthe buffer film 60 whose side surface has a depressed portion.

After that, through the steps similar to those described in <Method 1for Manufacturing Semiconductor Device>, the transistor can befabricated.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 6

In this embodiment, a reduction in resistivity of the second regions 55b and 55 c in the oxide semiconductor film 55 that occurs when thesecond regions 55 b and 55 c in the oxide semiconductor film 55 containoxygen vacancies and hydrogen will be described. Specifically, V_(O)Hformed in the second regions 55 b and 55 c in the oxide semiconductorfilm 55 will be described. Note that in this embodiment, a state inwhich a hydrogen atom H exists in an oxygen vacancy V_(O) is expressedas V_(O)H.

<(1) Ease of Formation and Stability of V_(O)H>

In the case where an oxide semiconductor film (hereinafter referred toas IGZO) is a crystal, H preferentially diffuses along the a-b plane ata room temperature. In heat treatment at 450° C., H diffuses along thea-b plane and in the c-axis direction. Here, description is made onwhether H easily enters an oxygen vacancy V_(O) if the oxygen vacancyV_(O) exists in IGZO.

An InGaZnO₄ crystal model shown in FIG. 19 was used for calculation. Theactivation barrier (E_(a)) along the reaction path where H in V_(O)H isreleased from V_(O) and bonded to oxygen was calculated by a nudgedelastic band (NEB) method. The calculation conditions are shown in Table1.

TABLE 1 Software VASP Calculation Method NEB method Functional GGA-PBEPseudo potential PAW Cut-off energy 500 eV k-point 2 × 2 × 3

In the InGaZnO₄ crystal model, there are oxygen sites 1 to 4 as shown inFIG. 19 which differ from each other in metal elements bonded to oxygenand the number of bonded metal elements. Here, calculation was made onthe oxygen sites 1 and 2 in which an oxygen vacancy V_(O) is easilyformed.

First, calculation was made on the oxygen site 1 in which an oxygenvacancy V_(O) is easily formed, which is herein the oxygen site that wasbonded to three In atoms and one Zn atom.

FIG. 20A shows a model in the initial state and FIG. 20B shows a modelin the final state. FIG. 21 shows the calculated activation barrier(E_(a)) in the initial state and the final state. Note that here, theinitial state refers to a state in which H exists in an oxygen vacancyV_(O) (V_(O)H), and the final state refers to a structure including anoxygen vacancy V_(O) and a state in which H is bonded to oxygen bondedto one Ga atom and two Zn atoms (H—O).

From the calculation results, bonding of H in an oxygen vacancy V_(O) toanother oxygen atom needs an energy of approximately 1.52 eV, whileentry of H bonded to O into an oxygen vacancy V_(O) needs an energy ofapproximately 0.46 eV.

Reaction frequency (Γ) was calculated with use of the activationbarriers (E_(a)) obtained by the calculation and Formula 1. In Formula1, k_(B) represents the Boltzmann constant and T represents the absolutetemperature.

$\begin{matrix}{\left\lbrack {{Formula}\mspace{14mu} 1} \right\rbrack\mspace{619mu}} & \; \\{\Gamma = {v\mspace{14mu}{\exp\left( {- \frac{E_{a}}{k_{B}T}} \right)}}} & (1)\end{matrix}$

The reaction frequency at 350° C. was calculated on the assumption thatthe frequency factor ν=10¹³/s. The frequency of H transfer from themodel shown in FIG. 20A to the model shown in FIG. 20B was 5.52×10⁰/s,whereas the frequency of H transfer from the model shown in FIG. 20B tothe model shown in FIG. 20A was 1.82×10⁹/s. This suggests that Hdiffusing in IGZO is likely to form V_(O)H if an oxygen vacancy V_(O)exists in the neighborhood, and H is unlikely to be released from theoxygen vacancy V_(O) once V_(O)H is formed.

Next, calculation was made on the oxygen site 2 in which an oxygenvacancy V_(O) is easily formed, which is herein the oxygen site that wasbonded to one Ga atom and two Zn atoms.

FIG. 22A shows a model in the initial state and FIG. 22B shows a modelin the final state. FIG. 23 shows the calculated activation barrier(E_(a)) in the initial state and the final state. Note that here, theinitial state refers to a state in which H exists in an oxygen vacancyV_(O) (V_(O)H), and the final state refers to a structure including anoxygen vacancy V_(O) and a state in which H is bonded to oxygen bondedto one Ga atom and two Zn atoms (H—O).

From the calculation results, bonding of H in an oxygen vacancy V_(O) toanother oxygen atom needs an energy of approximately 1.75 eV, whileentry of H bonded to O in an oxygen vacancy V_(O) needs an energy ofapproximately 0.35 eV.

Reaction frequency (Γ) was calculated with use of the activationbarriers (E_(a)) obtained by the calculation and the above Formula 1.

The reaction frequency at 350° C. was calculated on the assumption thatthe frequency factor ν=10¹³/s. The frequency of H transfer from themodel shown in FIG. 22A to the model shown in FIG. 22B was 7.53×10⁻²/s,whereas the frequency of H transfer from the model shown in FIG. 22B tothe model shown in FIG. 22A was 1.44×10¹⁰/s. This suggests that H isunlikely to be released from the oxygen vacancy V_(O) once V_(O)H isformed.

From the above results, it was found that H in IGZO easily diffused inheat treatment and if an oxygen vacancy V_(O) existed, H was likely toenter the oxygen vacancy V_(O) to be V_(O)H.

<(2) Transition Level of V_(O)H>

The calculation by the NEB method, which was described in <(1) Ease ofFormation and Stability of V_(O)H>, indicates that in the case where anoxygen vacancy V_(O) and H exist in IGZO, the oxygen vacancy V_(O) and Heasily form V_(O)H and V_(O)H is stable. To determine whether V_(O)H isrelated to a carrier trap, the transition level of V_(O)H wascalculated.

The model used for calculation is the InGaZnO₄ crystal model (112atoms). V_(O)H models of the oxygen sites 1 and 2 shown in FIG. 19 weremade to calculate the transition levels. The calculation conditions areshown in Table 2.

TABLE 2 Software VASP Model InGaZnO₄ crystal (112 atoms) FunctionalHSE06 Mixture ratio of exchange terms 0.25 Pseudo potential GGA-PBECut-off energy 800 eV k-point 1 × 1 × 1

The mixture ratio of exchange terms was adjusted to have a band gapclose to the experimental value. As a result, the band gap of theInGaZnO₄ crystal model without defects was 3.08 eV that is close to theexperimental value, 3.15 eV.

The transition level (∈(q/q′)) of a model having defect D can becalculated by the following Formula 2. Note that ΔE(D^(q)) representsthe formation energy of defect D at charge q, which is calculated byFormula 3.

$\begin{matrix}\left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack & \; \\{\mspace{225mu}{{ɛ\left( {q\text{/}q^{\prime}} \right)} = \frac{{\Delta\;{E\left( D^{q} \right)}} - {\Delta\;{E\left( D^{q^{\prime}} \right)}}}{q^{\prime} - q}}} & (2) \\\left\lbrack {{Formula}\mspace{14mu} 3} \right\rbrack & \; \\{\mspace{25mu}{{\Delta\;{E\left( D^{q} \right)}} = {{E_{tot}\left( D^{q} \right)} - {E_{tot}({bulk})} + {\sum\limits_{i}{\Delta\; n_{i}\mu_{i}}} + {q\left( {ɛ_{VBM} + {\Delta\; V_{q}} + E_{F}} \right)}}}} & (3)\end{matrix}$

In Formulae 2 and 3, E_(tot)(D^(q)) represents the total energy of themodel having defect D at the charge q in, E_(tot)(bulk) represents thetotal energy in a model without defects, Δn_(i) represents a change inthe number of atoms i contributing to defects, μ_(i) represents thechemical potential of atom i, ∈_(VBM) represents the energy of thevalence band maximum in the model without defects, ΔV_(q) represents thecorrection term relating to the electrostatic potential, and E_(F)represents the Fermi energy.

FIG. 24 shows the transition levels of V_(O)H obtained from the aboveformulae. The numbers in FIG. 24 represent the depth from the conductionband minimum. In FIG. 24, the transition level of V_(O)H in the oxygensite 1 is at 0.05 eV from the conduction band minimum, and thetransition level of V_(O)H in the oxygen site 2 is at 0.11 eV from theconduction band minimum. Therefore, these V_(O)H would be related toelectron traps; that is, V_(O)H was found to behave as a donor. It wasalso found that IGZO including V_(O)H had conductivity.

<(3) Temperature Dependence of Resistivity>

The temperature dependence of the resistivity of a film formed using anoxide conductor (hereinafter referred to as an oxide conductor film)will be described with reference to FIG. 25.

In this embodiment, samples each including an oxide conductor film werefabricated. As the oxide conductor film, an oxide conductor film(OC_SiN_(x)) formed by making an oxide semiconductor film in contactwith a silicon nitride film, an oxide conductor film (OC_Ardope+SiN_(x)) formed by making an oxide semiconductor film in contactwith a silicon nitride film after addition of argon to the oxidesemiconductor film with a doping apparatus, or an oxide conductor film(OC_Ar plasma+SiN_(x)) formed by making an oxide semiconductor film incontact with a silicon nitride film after exposure of the oxidesemiconductor film to argon plasma with a plasma treatment apparatus wasformed. The silicon nitride film contains hydrogen.

A method for fabricating the sample including the oxide conductor film(OC_SiN_(x)) is described below. A 400-nm-thick silicon oxynitride filmwas deposited over a glass substrate by a plasma CVD method and thenexposed to oxygen plasma so that an oxygen ion was added to the siliconoxynitride film, whereby a silicon oxynitride film from which oxygen isreleased by being heated was formed. Next, a 100-nm-thick In—Ga—Zn oxidefilm was formed over the silicon oxynitride film by a sputtering methodusing a sputtering target with an atomic ratio of In:Ga:Zn=1:1:1.2, andheat treatment at 450° C. in a nitrogen atmosphere and subsequently heattreatment at 450° C. in a mixed gas atmosphere of nitrogen and oxygenwere performed. Next, a 100-nm-thick silicon nitride film was depositedby a plasma CVD method. Then, the film was subjected to heat treatmentin a mixed gas atmosphere of nitrogen and oxygen at 350° C.

A method for fabricating the sample including the oxide conductor film(OC_Ar dope+SiN_(x)) is described below. A 400-nm-thick siliconoxynitride film was deposited over a glass substrate by a plasma CVDmethod and then exposed to oxygen plasma so that an oxygen ion was addedto the silicon oxynitride film, whereby a silicon oxynitride film fromwhich oxygen is released by being heated was formed. Next, a100-nm-thick In—Ga—Zn oxide film was formed over the silicon oxynitridefilm by a sputtering method using a sputtering target with an atomicratio of In:Ga:Zn=1:1:1.2, and heat treatment at 450° C. in a nitrogenatmosphere and subsequently heat treatment at 450° C. in a mixed gasatmosphere of nitrogen and oxygen were performed. Next, with a dopingapparatus, argon with a dose of 5×10¹⁴/cm² was added to the In—Ga—Znoxide film at an accelerating voltage of 10 kV, whereby an oxygenvacancy was formed in the In—Ga—Zn oxide film. Next, a 100-nm-thicksilicon nitride film was deposited by a plasma CVD method. Then, thefilm was subjected to heat treatment in a mixed gas atmosphere ofnitrogen and oxygen at 350° C.

A method for fabricating the sample including the oxide conductor film(OC_Ar plasma+SiN_(x)) is described below. A 400-nm-thick siliconoxynitride film was deposited over a glass substrate by a plasma CVDmethod and then exposed to oxygen plasma, whereby a silicon oxynitridefilm from which oxygen is released by being heated was formed. Next, a100-nm-thick In—Ga—Zn oxide film was formed over the silicon oxynitridefilm by a sputtering method using a sputtering target with an atomicratio of In:Ga:Zn=1:1:1.2, and heat treatment at 450° C. in a nitrogenatmosphere and subsequently heat treatment at 450° C. in a mixed gasatmosphere of nitrogen and oxygen were performed. Next, argon plasma wasgenerated with a plasma treatment apparatus, and an accelerated argonion was made to collide against the In—Ga—Zn oxide film, whereby anoxygen vacancy was generated. Next, a 100-nm-thick silicon nitride filmwas deposited by a plasma CVD method. Then, the film was subjected toheat treatment in a mixed gas atmosphere of nitrogen and oxygen at 350°C.

Next, FIG. 25 shows the measured resistivity of the samples. Themeasurement of resistivity was performed by the four-probe Van der Pauwmethod. In FIG. 25, the horizontal axis represents measurementtemperature, and the vertical axis represents resistivity. Measurementresults of the oxide conductor film (OC_SiN_(x)) are plotted as squares,measurement results of the oxide conductor film (OC_Ar dope+SiN_(x)) areplotted as circles, and measurement results of the oxide conductor film(OC_Ar plasma+SiN_(x)) are plotted as triangles.

Note that although not shown in the graph, an oxide semiconductor filmthat is not in contact with a silicon nitride film has high resistivitythat is difficult to measure. This indicates that the oxide conductorfilm has lower resistivity than the oxide semiconductor film.

As is seen from FIG. 25, there is a small variation in the resistivityof the oxide conductor film (OC_Ar dope+SiN_(x)) and the oxide conductorfilm (OC_Ar plasma+SiN_(x)), each of which includes oxygen vacancies andhydrogen. Typically, the variation in resistivity at temperatures from80 K to 290 K is lower than ±20%. Alternatively, the variation inresistivity at temperatures from 150 K to 250 K is lower than ±10%. Inother words, the oxide conductor is a degenerate semiconductor and it issuggested that the conduction band edge agrees with or substantiallyagrees with the Fermi level. Thus, when the oxide conductor film is usedfor a source region and a drain region of a transistor, an ohmic contactis made between the oxide conductor film and conductive filmsfunctioning as a source electrode and a drain electrode, therebyreducing the contact resistance between the oxide conductor film and theconductive films functioning as the source and drain electrodes. Sincethe temperature dependence of the resistivity of an oxide conductor islow, the amount of change in the contact resistance between the oxideconductor film and the conductive films functioning as the source anddrain electrodes is small; thus, a highly reliable transistor can befabricated.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 7

A structure of a gate electrode that can be applicable to Embodiments 1to 6 will be described with reference to FIG. 26.

In this embodiment, the conductive film 61 may be formed of a conductiveoxide semiconductor film similarly to the second regions 55 b and 55 cin the oxide semiconductor film 55 (see FIG. 26). The conductive oxidesemiconductor film has a light-transmitting property like the oxidesemiconductor film 55. This enables a transistor with alight-transmitting property to be fabricated.

Note that the conductive oxide semiconductor film has higher resistivitythan a conductive film formed of a metal; thus, a conductive film 77connected to the conductive film 61 is preferably formed over theinsulating film 67 in the case where a large substrate is used as thesubstrate 51.

Next, a method for manufacturing the transistor illustrated in FIG. 26will be described with reference to FIGS. 3A to 3D and FIGS. 4A to 4C.

In a step shown in FIG. 3C, an oxide semiconductor film is formedinstead of the conductive film 61.

After that, the insulating film 57 is formed as in FIG. 4A, and then theimpurity element 63 is added to the oxide semiconductor film 54 and theoxide semiconductor film over the insulating film 57.

Then, the insulating film 64 containing hydrogen is formed asillustrated in FIG. 4B. Accordingly, the conductive film 61 (see FIG.26) can be formed to have a structure similar to the structures of thesecond regions 55 b and 55 c in the oxide semiconductor film 55.

Next, the insulating film 67 having openings is formed, and then thepair of conductive films 68 and 69 is formed. After that, the insulatingfilm 79 having an opening is formed, and then the conductive film 77connected to the conductive film 61 (see FIG. 26) is formed in a mannersimilar to that of the pair of conductive films 68 and 69.

Through the above-described steps, a self-aligned transistor can befabricated.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 8

In this embodiment, a structure of an oxide semiconductor film that canbe used in any of the above embodiments will be described with referenceto FIGS. 27A to 27D. Note that although description is made here usingthe transistor described in Embodiment 1, this embodiment can be appliedas appropriate to the transistor described in any of the aboveembodiments.

The transistor illustrated in FIG. 27A has the same structure as thetransistor illustrated in FIG. 1A, which is described in Embodiment 1,except that the structure of the oxide semiconductor film 55 isdifferent. FIGS. 27B to 27D are enlarged views of the region 71including the oxide semiconductor film 55 and its surroundings.

As illustrated in FIG. 27B, the oxide semiconductor film 55 includes afirst oxide semiconductor film 55_1 that is in contact with theinsulating film 53 and a second oxide semiconductor film 55_2 that is incontact with the first oxide semiconductor film 55_1 and the insulatingfilm 57.

Alternatively, as illustrated in FIG. 27C, the oxide semiconductor film55 includes the second oxide semiconductor film 55_2 that is in contactwith the insulating film 53 and a third oxide semiconductor film 55_3that is in contact with the second oxide semiconductor film 55_2 and theinsulating film 57.

Further alternatively, as illustrated in FIG. 27D, the oxidesemiconductor film 55 includes the first oxide semiconductor film 55_1that is in contact with the insulating film 53, the second oxidesemiconductor film 55_2 that is in contact with the first oxidesemiconductor film 55_1, and the third oxide semiconductor film 55_3that is in contact with the second oxide semiconductor film 55_2 and theinsulating film 57.

In the case where the first oxide semiconductor film 55_1, the secondoxide semiconductor film 55_2, and the third oxide semiconductor film55_3 are each an In-M-Zn oxide film (M is Al, Ti, Ga, Y, Zr, Sn, La, Ce,Nd, or Hf), when In:M:Zn=x₁:y₁:z₁ [atomic ratio] is satisfied in thefirst oxide semiconductor film 55_1 and the third oxide semiconductorfilm 55_3 and In:M:Zn=x₂:y₂:z₂ [atomic ratio] is satisfied in the secondoxide semiconductor film 55_2, y₁/x₁ is larger than y₂/x₂, preferablyy₁/x₁ is 1.5 times or more as large as y₂/x₂. It is further preferablethat y₁/x₁ be twice or more as large as y₂/x₂. It is still furtherpreferable that y₁/x₁ be three or more times as large as y₂/x₂. In thatcase, y₁ is preferably larger than or equal to x₁ in the first oxidesemiconductor film 55_1 and the third oxide semiconductor film 55_3, inwhich case a transistor including the second oxide semiconductor film55_2 can have stable electric characteristics. However, when y₁ is threeor more times as large as x₁, the field-effect mobility of thetransistor including the second oxide semiconductor film 55_2 isreduced. Thus, it is preferable that y₁ be less than three times x₁.

In the case where the second oxide semiconductor film 55_2 is an In-M-Znoxide film (M is Ga, Y, Zr, La, Ce, or Nd) and a target having theatomic ratio of metal elements of In:M:Zn=x₁:y₁:z₁ is used for formingthe second oxide semiconductor film 55_2, x₁/y₁ is preferably greaterthan or equal to ⅓ and less than or equal to 6, further preferablygreater than or equal to 1 and less than or equal to 6, and z₁/y₁ ispreferably greater than or equal to ⅓ and less than or equal to 6,further preferably greater than or equal to 1 and less than or equal to6. Note that when z₁/y₁ is greater than or equal to 1 and less than orequal to 6, a CAAC-OS film is easily formed as the second oxidesemiconductor film 55_2. Typical examples of the atomic ratio of In to Mand Zn of the target are 1:1:1, 1:1:1.2, 2:1:1.5, 2:1:2.3, 2:1:3, and3:1:2.

In the case where the first oxide semiconductor film 55_1 and the thirdoxide semiconductor film 55_3 are each an In-M-Zn oxide film (M is Ga,Y, Zr, La, Ce, or Nd) and a target having an atomic ratio of metalelements of In:M:Zn=x₂:y₂:z₂ is used for forming the first oxidesemiconductor film 55_1 and the third oxide semiconductor film 55_3,x₂/y₂ is preferably less than x₁/y₁, and z₂/y₂ is preferably greaterthan or equal to ⅓ and less than or equal to 6, further preferablygreater than or equal to 1 and less than or equal to 6. Note that whenz₂/y₂ is greater than or equal to 1 and less than or equal to 6, aCAAC-OS film is easily formed as the first oxide semiconductor film 55_1and the third oxide semiconductor film 55_3. Typical examples of theatomic ratio of In to M and Zn in the target are 1:3:2, 1:3:4, 1:3:6,1:3:8, 1:4:3, 1:4:4, 1:4:5, 1:4:6, 1:6:3, 1:6:4, 1:6:5, 1:6:6, 1:6:7,1:6:8, and 1:6:9.

Note that the proportion of each metal element in the atomic ratio ofeach of the first oxide semiconductor film 55_1, the second oxidesemiconductor film 55_2, and the third oxide semiconductor film 55_3varies within a range of ±40% of any of the above atomic ratios as anerror.

The atomic ratio is not limited to the above, and the atomic ratio maybe appropriately set in accordance with required semiconductorcharacteristics.

Furthermore, the first oxide semiconductor film 55_1 and/or the thirdoxide semiconductor film 55_3 can be formed using gallium oxide. The useof gallium oxide for the first oxide semiconductor film 55_1 and thethird oxide semiconductor film 55_3 can reduce leakage current of thetransistor.

In FIG. 27D, the first oxide semiconductor film 55_1 and the third oxidesemiconductor film 55_3 may have the same composition. For example, anIn—Ga—Zn oxide having an atomic ratio of In:Ga:Zn=1:3:2, 1:3:4, or 1:4:5may be used for the first oxide semiconductor film 55_1 and the thirdoxide semiconductor film 55_3.

Alternatively, in FIG. 27D, the first oxide semiconductor film 55_1 andthe third oxide semiconductor film 55_3 may have different compositions.For example, an In—Ga—Zn oxide having an atomic ratio of In:Ga:Zn=1:3:2may be used for the first oxide semiconductor oxide film 55_1, and anIn—Ga—Zn oxide having an atomic ratio of In:Ga:Zn=1:3:4 or 1:4:5 may beused for the third oxide semiconductor film 55_3.

The thicknesses of the first oxide semiconductor film 55_1 and the thirdoxide semiconductor film 55_3 are each greater than or equal to 3 nm andless than or equal to 100 nm, preferably greater than or equal to 3 nmand less than or equal to 50 nm. The thickness of the second oxidesemiconductor film 55_2 is greater than or equal to 3 nm and less thanor equal to 200 nm, preferably greater than or equal to 3 nm and lessthan or equal to 100 nm, further preferably greater than or equal to 3nm and less than or equal to 50 nm. Note that when the thickness of eachof the first oxide semiconductor film 55_1 and the third oxidesemiconductor film 55_3 is smaller than that of the second oxidesemiconductor film 55_2, the amount of threshold voltage shift of thetransistor can be reduced. In addition, to prevent oxygen contained inthe third oxide semiconductor film 55_3 from diffusing to the pair ofconductive films 68 and 69 and thus oxidizing the pair of conductivefilms 68 and 69, it is preferable that the thickness of the third oxidesemiconductor film 55_3 be small.

The interface between the first oxide semiconductor film 55_1 and thesecond oxide semiconductor film 55_2 and the interface between thesecond oxide semiconductor film 55_2 and the third oxide semiconductorfilm 55_3 can be observed by scanning transmission electron microscopy(STEM).

Any of the crystal structures of the oxide semiconductor film 55described in Embodiment 1 can be used as appropriate for the first oxidesemiconductor film 55_1, the second oxide semiconductor film 55_2, andthe third oxide semiconductor film 55_3.

By providing an oxide semiconductor film in which oxygen vacancies areless likely to be generated than in the second oxide semiconductor film55_2 on and/or under the second oxide semiconductor film 55_2 so as tobe in contact with the second oxide semiconductor film 55_2, oxygenvacancies in the second oxide semiconductor film 55_2 can be reduced. Inaddition, the second oxide semiconductor film 55_2 is in contact withthe first oxide semiconductor film 55_1 and/or the third oxidesemiconductor film 55_3 containing one or more metal elements containedin the second oxide semiconductor film 55_2; thus, the interface betweenthe first oxide semiconductor film 55_1 and the second oxidesemiconductor film 55_2 and the interface between the second oxidesemiconductor film 55_2 and the third oxide semiconductor film 55_3 haveextremely low interface state density. Thus, oxygen vacancies in thesecond oxide semiconductor film 55_2 can be reduced.

In the case where the second oxide semiconductor film 55_2 is in contactwith an insulating film containing a different constituent element(e.g., a gate insulating film including a silicon oxide film), aninterface state might be formed and the interface state might form achannel. At this time, a second transistor having a different thresholdvoltage appears, so that an apparent threshold voltage of the transistoris varied. However, since the first oxide semiconductor film 55_1 thatcontains one or more metal elements contained in the second oxidesemiconductor film 55_2 is in contact with the second oxidesemiconductor film 55_2, an interface state is not easily formed at theinterface between the first oxide semiconductor film 55_1 and the secondoxide semiconductor film 55_2. Thus, with the first oxide semiconductorfilm 55_1, variations in the electric characteristics of the transistor,such as threshold voltage, can be reduced.

In the case where a channel is formed at the interface between theinsulating film 57 and the second oxide semiconductor film 55_2,interface scattering occurs at the interface and the field-effectmobility of the transistor is decreased. However, since the third oxidesemiconductor film 55_3 that contains one or more metal elementscontained in the second oxide semiconductor film 55_2 is in contact withthe second oxide semiconductor film 55_2, carrier scattering does noteasily occur at the interface between the second oxide semiconductorfilm 55_2 and the third oxide semiconductor film 55_3 and thefield-effect mobility of the transistor can be increased.

The first oxide semiconductor film 55_1 and the third oxidesemiconductor film 55_3 also serve as barrier films that preventformation of an impurity state due to the entry of the constituentelements of the insulating film 53 and the insulating film 57 into thesecond oxide semiconductor film 55_2.

For example, in the case where the insulating film 53 and the insulatingfilm 57 contain silicon, silicon contained in the insulating film 53 andthe insulating film 57 or carbon that might be contained in theinsulating film 53 and the insulating film 57 might enter the firstoxide semiconductor film 55_1 and/or the third oxide semiconductor film55_3 at a depth of several nanometers from the interfaces. When animpurity such as silicon or carbon enters the second oxide semiconductorfilm 55_2, an impurity state is formed. The impurity state serves as adonor and generates an electron, so that the second oxide semiconductorfilm 55_2 might become an n-type.

However, when the thicknesses of the first oxide semiconductor film 55_1and the third oxide semiconductor film 55_3 are larger than severalnanometers, the impurity such as silicon or carbon that has entered thefirst oxide semiconductor film 55_1 and the third oxide semiconductorfilm 55_3 does not reach the second oxide semiconductor film 55_2, sothat the influence of impurity states is reduced.

Thus, the transistor described in this embodiment is a transistor inwhich variations in the electric characteristics such as thresholdvoltage are reduced.

<Band Structure>

Next, band structures along given cross sections of the transistorillustrated in FIG. 28A, which is a typical example of the transistordescribed in this embodiment, is described. FIG. 28B, FIG. 28C, and FIG.28D are enlarged views of a region 71 a, a region 71 b, and a region 71c, respectively, surrounded by dashed lines in FIG. 28A. The transistorillustrated in FIG. 28A includes the oxide semiconductor film 55 havingthe first region 55 a and the second regions 55 b and 55 c. Asillustrated in FIG. 28B, the first region 55 a includes a first region55_2 a and a first region 55_3 a between the insulating films 53 and 57.Furthermore, as illustrated in FIG. 28C, the second region 55 b includesa second region 55_2 b and a second region 55_3 b between the insulatingfilm 53 and the insulating film 65 containing hydrogen. In addition, asillustrated in FIG. 28D, the second region 55 c includes a second region55_2 c and a second region 55_3 c between the insulating film 53 and theinsulating film 65 containing hydrogen.

FIG. 28E is a band structure in the O-P cross section including achannel region of the transistor illustrated in FIG. 28A. The firstregion 55_3 a is assumed to have a slightly larger energy gap than thefirst region 55_2 a. The insulating film 53 and the insulating film 57are each assumed to have a sufficiently larger energy gap than the firstregion 55_2 a and the first region 55_3 a. Furthermore, the Fermi levels(denoted by Ef) of the first region 55_2 a, the first region 55_3 a, theinsulating film 53, and the insulating film 57 are assumed to be equalto the intrinsic Fermi levels thereof (denoted by Ei). The work functionof the conductive film 61 is assumed to be equal to the Fermi levels.Note that the conduction band minimum is denoted by Ec, and the valenceband maximum is denoted by Ev.

When a gate voltage is set to be higher than or equal to the thresholdvoltage of the transistor, an electron flows preferentially in the firstregion 55_2 a owing to the energy difference between the conduction bandminimums of the first region 55_2 a and the first region 55_3 a. Thatis, it is probable that an electron is embedded in the first region 55_2a.

Accordingly, in the transistor according to one embodiment of thepresent invention, the embedment of an electron reduces the influence ofinterface scattering. Therefore, resistance in the channel region of thetransistor according to one embodiment of the present invention is low.

FIG. 28F shows a band structure in the Q-R cross section including asource region or a drain region of the transistor illustrated in FIG.28A. Note that the second regions 55_2 b and 55_2 c and the secondregions 55_3 b and 55_3 c are assumed to be in a degenerate state. Theconduction band minimum of the second region 55_2 b is assumed to beapproximately at the same level as the Fermi level of the first region55_2 a. Furthermore, the conduction band minimum of the second region55_3 b is assumed to be approximately at the same level as the Fermilevel of the first region 55_3 a. The same applies to the second region55_2 c and the second region 55_3 c.

At this time, an ohmic contact is made between the conductive film 68and the second region 55_3 b because an energy barrier therebetween issufficiently low. An ohmic contact is also made between the secondregion 55_3 b and the second region 55_2 b. Similarly, an ohmic contactis made between the conductive film 69 and the second region 55_3 cbecause an energy barrier therebetween is sufficiently low. An ohmiccontact is also made between the second region 55_3 c and the secondregion 55_2 c. Therefore, electron transfer is conducted smoothlybetween the conductive films 68 and 69 and the first regions 55_2 a and55_3 a.

As described above, the transistor of one embodiment of the presentinvention is a transistor in which resistance in the channel region islow, since electron transfer between the channel region and the sourceand drain electrodes is conducted smoothly. That is, the transistor hasexcellent switching characteristics.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 9

In this embodiment, a structure of a transistor that can be used in theabove-described Embodiments will be described with reference to FIGS.29A and 29B. Note that although description is made here using thetransistor described in Embodiment 1, this embodiment can be applied asappropriate to the transistor described in the above-describedEmbodiments. FIG. 29A is a cross-sectional view of the transistor in thechannel length direction, and FIG. 29B is a cross-sectional view of thetransistor in the channel width direction.

As illustrated in FIGS. 29A and 29B, a transistor described in thisembodiment includes a gate electrode 73 that overlaps with the oxidesemiconductor film 55 with the insulating film 53 provided therebetween.

By making the potential of the gate electrode 73 different from thepotential of the conductive film 61, the threshold voltage of thetransistor can be controlled and the transistor can be a normally-offtransistor. Furthermore, by making the conductive film 61 and the gateelectrode 73 connected to each other in an opening provided in theinsulating films 53 and 57 as illustrated in FIG. 29B, the potential ofthe gate electrode 73 can be the same as the potential of the conductivefilm 61, whereby on-state current of the transistor can be increased.

Other components are the same as those of the transistor described inEmbodiment 1; thus, detailed descriptions thereof are omitted here.

The structures, the methods, and the like described in this embodimentcan be combined as appropriate with any of the structures, the methods,and the like described in the other embodiments.

Embodiment 10

In this embodiment, details of an oxide semiconductor that can be usedin any of the above embodiments will be described below.

<Structure of Oxide Semiconductor>

A structure of an oxide semiconductor is described below.

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a nanocrystalline oxide semiconductor (nc-OS), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

From another perspective, an oxide semiconductor is classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

It is known that an amorphous structure is generally defined as beingmetastable and unfixed, and being isotropic and having no non-uniformstructure. In other words, an amorphous structure has a flexible bondangle and a short-range order but does not have a long-range order.

This means that an inherently stable oxide semiconductor cannot beregarded as a completely amorphous oxide semiconductor. Moreover, anoxide semiconductor that is not isotropic (e.g., an oxide semiconductorthat has a periodic structure in a microscopic region) cannot beregarded as a completely amorphous oxide semiconductor. Note that ana-like OS has a periodic structure in a microscopic region, but at thesame time has a void and has an unstable structure. For this reason, ana-like OS has physical properties similar to those of an amorphous oxidesemiconductor.

<CAAC-OS>

First, a CAAC-OS is described.

A CAAC-OS is one of oxide semiconductors having a plurality of c-axisaligned crystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, in the high-resolutionTEM image, a boundary between pellets, that is, a grain boundary is notclearly observed. Thus, in the CAAC-OS, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

A CAAC-OS observed with TEM is described below. FIG. 30A shows ahigh-resolution TEM image of a cross section of the CAAC-OS which isobserved from a direction substantially parallel to the sample surface.The high-resolution TEM image is obtained with a spherical aberrationcorrector function. The high-resolution TEM image obtained with aspherical aberration corrector function is particularly referred to as aCs-corrected high-resolution TEM image. The Cs-corrected high-resolutionTEM image can be obtained with, for example, an atomic resolutionanalytical electron microscope JEM-ARM200F manufactured by JEOL Ltd.

FIG. 30B is an enlarged Cs-corrected high-resolution TEM image of aregion (1) in FIG. 30A. FIG. 30B shows that metal atoms are arranged ina layered manner in a pellet. Each metal atom layer has a configurationreflecting unevenness of a surface over which the CAAC-OS is formed(hereinafter, the surface is referred to as a formation surface) or atop surface of the CAAC-OS, and is arranged parallel to the formationsurface or the top surface of the CAAC-OS.

As shown in FIG. 30B, the CAAC-OS has a characteristic atomicarrangement. The characteristic atomic arrangement is denoted by anauxiliary line in FIG. 30C. FIGS. 30B and 30C prove that the size of apellet is greater than or equal to 1 nm or greater than or equal to 3nm, and the size of a space caused by tilt of the pellets isapproximately 0.8 nm. Therefore, the pellet can also be referred to as ananocrystal (nc). Furthermore, the CAAC-OS can also be referred to as anoxide semiconductor including c-axis aligned nanocrystals (CANC).

Here, according to the Cs-corrected high-resolution TEM images, theschematic arrangement of pellets 5100 of a CAAC-OS over a substrate 5120is illustrated by such a structure in which bricks or blocks are stacked(see FIG. 30D). The part in which the pellets are tilted as observed inFIG. 30C corresponds to a region 5161 shown in FIG. 30D.

FIG. 31A shows a Cs-corrected high-resolution TEM image of a plane ofthe CAAC-OS observed from a direction substantially perpendicular to thesample surface. FIGS. 31B, 31C, and 31D are enlarged Cs-correctedhigh-resolution TEM images of regions (1), (2), and (3) in FIG. 31A,respectively. FIGS. 31B, 31C, and 31D indicate that metal atoms arearranged in a triangular, quadrangular, or hexagonal configuration in apellet. However, there is no regularity of arrangement of metal atomsbetween different pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD) is described. Forexample, when the structure of a CAAC-OS including an InGaZnO₄ crystalis analyzed by an out-of-plane method, a peak appears at a diffractionangle (2θ) of around 31° as shown in FIG. 32A. This peak is derived fromthe (009) plane of the InGaZnO₄ crystal, which indicates that crystalsin the CAAC-OS have c-axis alignment, and that the c-axes are aligned ina direction substantially perpendicular to the formation surface or thetop surface of the CAAC-OS.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 36° indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. It is preferable that in the CAAC-OS analyzed by anout-of-plane method, a peak appear when 2θ is around 31° and that a peaknot appear when 2θ is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray beam is incident on a sample in a directionsubstantially perpendicular to the c-axis, a peak appears when 2θ isaround 56°. This peak is attributed to the (110) plane of the InGaZnO₄crystal. In the case of the CAAC-OS, when analysis (ϕ scan) is performedwith 2θ fixed at around 56° and with the sample rotated using a normalvector of the sample surface as an axis (ϕ axis), as shown in FIG. 32B,a peak is not clearly observed. In contrast, in the case of a singlecrystal oxide semiconductor of InGaZnO₄, when ϕ scan is performed with2θ fixed at around 56°, as shown in FIG. 32C, six peaks which arederived from crystal planes equivalent to the (110) plane are observed.Accordingly, the structural analysis using XRD shows that the directionsof a-axes and b-axes are irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction is described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in a directionparallel to the sample surface, a diffraction pattern (also referred toas a selected-area transmission electron diffraction pattern) shown inFIG. 33A can be obtained. In this diffraction pattern, spots derivedfrom the (009) plane of an InGaZnO₄ crystal are included. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in a directionsubstantially perpendicular to the formation surface or the top surfaceof the CAAC-OS. Meanwhile, FIG. 33B shows a diffraction pattern obtainedin such a manner that an electron beam with a probe diameter of 300 nmis incident on the same sample in a direction perpendicular to thesample surface. As shown in FIG. 33B, a ring-like diffraction pattern isobserved. Thus, the electron diffraction also indicates that the a-axesand b-axes of the pellets included in the CAAC-OS do not have regularalignment. The first ring in FIG. 33B is considered to be derived fromthe (010) plane, the (100) plane, and the like of the InGaZnO₄ crystal.The second ring in FIG. 33B is considered to be derived from the (110)plane and the like.

As described above, the CAAC-OS is an oxide semiconductor with highcrystallinity. Entry of impurities, formation of defects, or the likemight decrease the crystallinity of an oxide semiconductor. This meansthat the CAAC-OS has small amounts of impurities and defects (e.g.,oxygen vacancies).

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, which results in disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. Impuritiescontained in the oxide semiconductor might serve as carrier traps orcarrier generation sources, for example. Furthermore, oxygen vacanciesin the oxide semiconductor serve as carrier traps or serve as carriergeneration sources when hydrogen is captured therein.

The CAAC-OS having small amounts of impurities and oxygen vacancies isan oxide semiconductor with low carrier density. Specifically, an oxidesemiconductor film with a carrier density of lower than 8×10¹¹/cm³,preferably lower than 1×10¹¹/cm³, further preferably lower than1×10¹⁰/cm³, and is higher than or equal to 1×10⁻⁹/cm³ can be used. Suchan oxide semiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low density of defect states.Thus, the CAAC-OS can be referred to as an oxide semiconductor havingstable characteristics.

<nc-OS>

Next, an nc-OS will be described.

An nc-OS has a region in which a crystal part is observed and a regionin which a crystal part is not clearly observed in a high-resolution TEMimage. In most cases, the size of a crystal part included in the nc-OSis greater than or equal to 1 nm and less than or equal to 10 nm, orgreater than or equal to 1 nm and less than or equal to 3 nm. Note thatan oxide semiconductor including a crystal part whose size is greaterthan 10 nm and less than or equal to 100 nm is sometimes referred to asa microcrystalline oxide semiconductor. In a high-resolution TEM imageof the nc-OS, for example, a grain boundary is not clearly observed insome cases. Note that there is a possibility that the origin of thenanocrystal is the same as that of a pellet in a CAAC-OS. Therefore, acrystal part of the nc-OS may be referred to as a pellet in thefollowing description.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not ordered.Accordingly, the nc-OS cannot be distinguished from an a-like OS or anamorphous oxide semiconductor, depending on an analysis method. Forexample, when the nc-OS is analyzed by an out-of-plane method using anX-ray beam having a diameter larger than the size of a pellet, a peakwhich shows a crystal plane does not appear. Furthermore, a diffractionpattern like a halo pattern is observed when the nc-OS is subjected toelectron diffraction using an electron beam with a probe diameter (e.g.,50 nm or larger) that is larger than the size of a pellet. Meanwhile,spots appear in a nanobeam electron diffraction pattern of the nc-OSwhen an electron beam having a probe diameter close to or smaller thanthe size of a pellet is applied. Moreover, in a nanobeam electrondiffraction pattern of the nc-OS, regions with high luminance in acircular (ring) pattern are shown in some cases. Also in a nanobeamelectron diffraction pattern of the nc-OS, a plurality of spots is shownin a ring-like region in some cases.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an a-like OS and an amorphousoxide semiconductor. Note that there is no regularity of crystalorientation between different pellets in the nc-OS. Therefore, the nc-OShas a higher density of defect states than the CAAC-OS.

<a-like OS>

An a-like OS has a structure intermediate between those of the nc-OS andthe amorphous oxide semiconductor.

In a high-resolution TEM image of the a-like OS, a void may be observed.Furthermore, in the high-resolution TEM image, there are a region wherea crystal part is clearly observed and a region where a crystal part isnot observed.

The a-like OS has an unstable structure because it contains a void. Toverify that an a-like OS has an unstable structure as compared with aCAAC-OS and an nc-OS, a change in structure caused by electronirradiation is described below.

An a-like OS (referred to as Sample A), an nc-OS (referred to as SampleB), and a CAAC-OS (referred to as Sample C) are prepared as samplessubjected to electron irradiation. Each of the samples is an In—Ga—Znoxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

Note that which part is regarded as a crystal part is determined asfollows. It is known that a unit cell of an InGaZnO₄ crystal has astructure in which nine layers including three In—O layers and sixGa—Zn—O layers are stacked in the c-axis direction. The distance betweenthe adjacent layers is equivalent to the lattice spacing on the (009)plane (also referred to as d value). The value is calculated to be 0.29nm from crystal structural analysis. Accordingly, a portion where thelattice spacing between lattice fringes is greater than or equal to 0.28nm and less than or equal to 0.30 nm is regarded as a crystal part ofInGaZnO₄. Each of lattice fringes corresponds to the a-b plane of theInGaZnO₄ crystal.

FIG. 34 shows change in the average size of crystal parts (at 22 pointsto 45 points) in each sample. Note that the crystal part sizecorresponds to the length of a lattice fringe. FIG. 34 indicates thatthe crystal part size in the a-like OS increases with an increase in thecumulative electron dose. Specifically, as shown by (1) in FIG. 34, acrystal part of approximately 1.2 nm (also referred to as an initialnucleus) at the start of TEM observation grows to a size ofapproximately 2.6 nm at a cumulative electron dose of 4.2×10⁸ e⁻/nm². Incontrast, the crystal part size in the nc-OS and the CAAC-OS showslittle change from the start of electron irradiation to a cumulativeelectron dose of 4.2×10⁸ e⁻/nm². Specifically, as shown by (2) and (3)in FIG. 34, the average crystal sizes in an nc-OS and a CAAC-OS areapproximately 1.4 nm and approximately 2.1 nm, respectively, regardlessof the cumulative electron dose.

In this manner, growth of the crystal part in the a-like OS is inducedby electron irradiation. In contrast, in the nc-OS and the CAAC-OS,growth of the crystal part is hardly induced by electron irradiation.Therefore, the a-like OS has an unstable structure as compared with thenc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit contains a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. Note that it is difficult to deposit anoxide semiconductor having a density of lower than 78% of the density ofthe single crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In:Ga:Zn=1:1:1, thedensity of the a-like OS is higher than or equal to 5.0 g/cm³ and lowerthan 5.9 g/cm³. For example, in the case of the oxide semiconductorhaving an atomic ratio of In:Ga:Zn=1:1:1, the density of each of thenc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³ and lowerthan 6.3 g/cm³.

Note that there is a possibility that an oxide semiconductor having acertain composition cannot exist in a single crystal structure. In thatcase, single crystal oxide semiconductors with different compositionsare combined at an adequate ratio, which makes it possible to calculatedensity equivalent to that of a single crystal oxide semiconductor withthe desired composition. The density of a single crystal oxidesemiconductor having the desired composition can be calculated using aweighted average according to the combination ratio of the singlecrystal oxide semiconductors with different compositions. Note that itis preferable to use as few kinds of single crystal oxide semiconductorsas possible to calculate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackedlayer including two or more of an amorphous oxide semiconductor, ana-like OS, an nc-OS, and a CAAC-OS, for example.

The structures, methods, and the like described in this embodiment canbe used as appropriate in combination with any of the structures,methods, and the like described in the other embodiments.

Embodiment 11

In this embodiment, a structure of an input/output device of oneembodiment of the present invention will be described with reference toFIGS. 35A to 35C and FIGS. 36A to 36C. Note that an input/output devicecan also be referred to as a touch panel.

FIGS. 35A and 35B are projection drawings illustrating a structure of aninput/output device of one embodiment of the present invention.

FIG. 35A is a projection drawing of an input/output device 500 of oneembodiment of the present invention, and FIG. 35B is a projectiondrawing illustrating a structure of a sensor unit 10U included in theinput/output device 500.

FIGS. 36A to 36C are cross-sectional views illustrating a structure ofthe input/output device 500 of one embodiment of the present invention.

FIG. 36A is a cross-sectional view taken along line Z1-Z2 of theinput/output device 500 of one embodiment of the present invention inFIG. 35A.

<Structure Example of Input/output Device>

The input/output device 500 described in this embodiment includes aflexible input device 100 and a display portion 501. The flexible inputdevice 100 includes a plurality of sensor units 10U arranged in matrixand each provided with window portions 14 transmitting visible light, ascan line G1 electrically connected to a plurality of sensor units 10Uplaced in the row direction (indicated by arrow R in the drawing), asignal line DL electrically connected to a plurality of sensor units 10Uplaced in the column direction (indicated by arrow C in the drawing),and a flexible base material 16 supporting the sensor unit 10U, the scanline G1, and the signal line DL. The display portion 501 includes aplurality of pixels 502 overlapping with the window portions 14 andarranged in matrix and a flexible second base material 510 supportingthe pixels 502 (see FIGS. 35A to 35C).

The sensor unit 10U includes a sensor element C overlapping with thewindow portion 14 and a sensor circuit 19 electrically connected to thesensor element C (see FIG. 35B).

The sensor element C includes an insulating layer 13, and a firstelectrode 11 and a second electrode 12 between which the insulatinglayer 13 is sandwiched (see FIG. 36A).

A selection signal is supplied to the sensor circuit 19, and the sensorcircuit 19 supplies a sensor signal DATA based on the change incapacitance of the sensor element C.

The scan line G1 can supply the selection signal, the signal line DL cansupply the sensor signal DATA, and the sensor circuit 19 is placed tooverlap with gaps between the plurality of window portions 14.

In addition, the input/output device 500 described in this embodimentincludes a coloring film between the sensor unit 10U and the pixel 502overlapping with the window portion 14 of the sensor unit 10U.

The input/output device 500 described in this embodiment includes theflexible input device 100 including the plurality of sensor units 10U,each of which is provided with the window portions 14 transmittingvisible light, and the flexible display portion 501 including theplurality of pixels 502 overlapping with the window portions 14. Thecoloring film is included between the window portion 14 and the pixel502.

With such a structure, the input/output device can supply a sensorsignal based on the change in the capacitance and positional informationof the sensor unit supplying the sensor signal, can display image datarelating to the positional information of the sensor unit, and can bebent. As a result, a novel input/output device with high convenience orhigh reliability can be provided.

The input/output device 500 may include a flexible substrate FPC 1 towhich a signal from the input device 100 is supplied and/or a flexiblesubstrate FPC 2 supplying a signal including image data to the displayportion 501.

In addition, a protective film 17 p protecting the input/output device500 by preventing damage and/or an anti-reflective film 567 p thatweakens the intensity of external light reflected by the input/outputdevice 500 may be included.

Moreover, the input/output device 500 includes a scan line drivercircuit 503 g which supplies the selection signal to a scan line of thedisplay portion 501, a wiring 511 supplying a signal, and a terminal 519electrically connected to the flexible substrate FPC 2.

Components of the input/output device 500 are described below. Note thatthese components cannot be clearly distinguished and one component alsoserves as another component or include part of another component in somecases.

For example, the input device 100 including the coloring filmoverlapping with the plurality of window portions 14 also serves as acolor filter.

Furthermore, for example, the input/output device 500 in which the inputdevice 100 overlaps with the display portion 501 serves as the inputdevice 100 as well as the display portion 501.

<Whole Structure>

The input/output device 500 includes the input device 100 and thedisplay portion 501 (see FIG. 35A).

<Input Device 100>

The input device 100 includes the plurality of sensor units 10U and theflexible base material 16 supporting the sensor units. For example, theplurality of sensor units 10U is arranged in matrix with 40 rows and 15columns on the flexible base material 16.

<Window Portion 14, Coloring Film, and Light-blocking Film BM>

The window portion 14 transmits visible light.

A coloring film transmitting light of a predetermined color is providedto overlap with the window portion 14. For example, a coloring film CFBtransmitting blue light, a coloring film CFG transmitting green light,or a coloring film CFR transmitting red light, is included (see FIG.35B).

Note that, in addition to the coloring films transmitting blue light,green light, and/or red light, coloring films transmitting light ofvarious colors such as a coloring film transmitting white light and acoloring film transmitting yellow light can be included.

For a coloring film, a metal material, a pigment, dye, or the like canbe used.

A light-blocking film BM is provided to surround the window portions 14.The light-blocking film BM does not easily transmit light as compared tothe window portion 14.

For the light-blocking film BM, carbon black, a metal oxide, a compositeoxide containing a solid solution of a plurality of metal oxides, or thelike can be used.

The scan line G1, the signal line DL, a wiring VPI, a wiring RES, awiring VRES, and the sensor circuit 19 are provided to overlap with thelight-blocking film BM.

Note that a light-transmitting overcoat layer covering the coloring filmand the light-blocking film BM can be provided.

<Sensor Element C>

The sensor element C includes the first electrode 11, the secondelectrode 12, and the insulating layer 13 between the first electrode 11and the second electrode 12 (see FIG. 36A).

The first electrode 11 is formed apart from other regions, for example,is formed into an island shape. A layer that can be formed in the sameprocess as that of the first electrode 11 is preferably placed close tothe first electrode 11 so that the user of the input/output device 500does not recognize the first electrode 11. Further preferably, thenumber of the window portions 14 placed in the gap between the firstelectrode 11 and the layer placed close to the first electrode 11 isreduced as much as possible. In particular, the window portion 14 ispreferably not placed in the gap.

The second electrode 12 is provided to overlap with the first electrode11, and the insulating layer 13 is provided between the first electrode11 and the second electrode 12.

When an object whose dielectric constant is different from that of theair gets closer to the first electrode 11 or the second electrode 12 ofthe sensor element C that is put in the air, the capacitance of thesensor element C is changed. Specifically, when a finger or the likegets closer to the sensor element C, the capacitance of the sensorelement C is changed. Thus, the sensor element C can be used in aproximity sensor.

The capacitance of the sensor element C that can be changed in shape,for example, is changed depending on the change in shape.

Specifically, when a finger or the like is in contact with the sensorelement C, and the gap between the first electrode 11 and the secondelectrode 12 becomes small, the capacitance of the sensor element C isincreased. Accordingly, the sensor element C can be used in a tactilesensor.

Specifically, when the sensor element C is bent, the gap between thefirst electrode 11 and the second electrode 12 becomes small, wherebythe capacitance of the sensor element C is increased. Accordingly, thesensor element C can be used in a bend sensor.

The first electrode 11 and the second electrode 12 include a conductivematerial.

For example, an inorganic conductive material, an organic conductivematerial, a metal material, a conductive ceramic material, or the likecan be used for the first electrode 11 and the second electrode 12.

Specifically, a metal element selected from aluminum, chromium, copper,tantalum, titanium, molybdenum, tungsten, nickel, silver, and manganese;an alloy including any of the above-described metal elements; an alloyincluding any of the above-described metal elements in combination; orthe like can be used. It is preferable that the first electrode 11 andthe second electrode 12 have a thickness that allows light to passthrough.

Alternatively, a conductive oxide such as indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium isadded can be used.

Alternatively, graphene or graphite can be used. The film includinggraphene can be formed, for example, by reducing a film containinggraphene oxide. As a reducing method, a method with application of heat,a method using a reducing agent, or the like can be employed.

Alternatively, a conductive polymer can be used.

<Sensor Circuit 19>

The sensor circuit 19 includes transistors M1 to M3, for example. Inaddition, the sensor circuit 19 includes wirings supplying a powersupply potential and a signal. For example, the signal line DL, thewiring VPI, a wiring CS, the scan line G1, the wiring RES, and thewiring VRES are included. Note that the specific structure example ofthe sensor circuit 19 will be described in detail in Embodiment 12.

Note that the sensor circuit 19 may be placed not to overlap with thewindow portion 14. For example, a wiring is placed not to overlap withthe window portion 14, whereby one side of the input device 100 can bevisually recognized easily from the other side of the input device 100.

Transistors that can be formed in the same process can be used as thetransistors M1 to M3, for example.

The transistor M1 includes a semiconductor film. For example, for thesemiconductor film, an element belonging to group 4, a compoundsemiconductor, or an oxide semiconductor can be used. Specifically, asemiconductor containing silicon, a semiconductor containing galliumarsenide, an oxide semiconductor containing indium, or the like can beused. Any of the transistors described in the above embodiments can beused as the transistor M1 as appropriate.

For the wiring, a conductive material can be used.

For example, an inorganic conductive material, an organic conductivematerial, a metal material, a conductive ceramic material, or the likecan be used for the wiring. Specifically, a material which is the sameas those of the first electrode 11 and the second electrode 12 can beused.

For the scan line G1, the signal line DL, the wiring VPI, the wiringRES, and the wiring VRES, a metal material such as aluminum, gold,platinum, silver, nickel, titanium, tungsten, chromium, molybdenum,iron, cobalt, copper, or palladium, or an alloy material containing anyof these metal materials can be used.

The sensor circuit 19 may be formed on the base material 16 byprocessing a film formed over the base material 16.

Alternatively, the sensor circuit 19 formed on another base material maybe transferred to the base material 16.

<Base Material 16>

For the flexible base material 16, an organic material, an inorganicmaterial, or a composite material of an organic material and aninorganic material can be used.

For the base material 16, a material with a thickness of 5 μm or moreand 2500 μm or less, preferably 5 μm or more and 680 μm or less, furtherpreferably 5 μm or more and 170 μm or less, further preferably 5 μm ormore and 45 μm or less, further preferably 8 μm or more and 25 μm orless can be used.

Furthermore, a material with which passage of impurities is inhibitedcan be preferably used for the base material 16. For example, materialswith a vapor permeability of lower than or equal to 10⁻⁵ g/(m²·day),preferably lower than or equal to 10⁻⁶ g/(m²·day) can be favorably used.

The base material 16 can be favorably formed using a material whosecoefficient of linear expansion is substantially equal to that of thebase material 510. For example, the coefficient of linear expansion ofthe materials are preferably lower than or equal to 1×10⁻³/K, furtherpreferably lower than or equal to 5×10⁻⁵/K, and still further preferablylower than or equal to 1×10⁻⁵/K.

Examples of the material of the base material 16 are organic materialssuch as a resin, a resin film, and a plastic film.

Another examples of the material of the base material 16 are inorganicmaterials such as a metal plate and a thin glass plate with a thicknessof more than or equal to 10 μm and less than or equal to 50 μm.

Another example of the material of the base material 16 is a compositematerial such as a resin film to which a metal plate, a thin glassplate, or a film of an inorganic material is attached with the use of aresin film.

Another example of the material of the base material 16 is a compositematerial such as a resin or a resin film into which a fibrous orparticulate metal, glass, or inorganic material is dispersed.

The resin film can be formed using a thermosetting resin or anultraviolet curable resin.

Specifically, a resin film or resin plate of polyester, polyolefin,polyamide, polyimide, polycarbonate, an acrylic resin, or the like canbe used.

Specifically, non-alkali glass, soda-lime glass, potash glass, crystalglass, or the like can be used.

Specifically, a metal oxide film, a metal nitride film, a metaloxynitride film, or the like can be used. For example, silicon oxide,silicon nitride, silicon oxynitride, an alumina film, or the like can beused.

Specifically, stainless steel, aluminum, or the like in which an openingis provided can be used.

Specifically, an acrylic resin, a urethane resin, an epoxy resin, or aresin having a siloxane bond can be used.

For example, a stack in which a flexible base material 16 b, a barrierfilm 16 a that prevents diffusion of impurities, and a resin film 16 cattaching the barrier film 16 a to the base material 16 b are stackedcan be preferably used for the base material 16 (see FIG. 36A).

Specifically, a film containing a stacked-layer material of a600-nm-thick silicon oxynitride film and a 200-nm-thick silicon nitridefilm can be used as the barrier film 16 a.

Alternatively, a film including a stacked-layer material of a600-nm-thick silicon oxynitride film, a 200-nm-thick silicon nitridefilm, a 200-nm-thick silicon oxynitride film, a 140-nm-thick siliconnitride oxide film, and a 100-nm-thick silicon oxynitride film stackedin this order can be used as the barrier film 16 a.

A resin film or resin plate of polyester, polyolefin, polyamide,polyimide, polycarbonate, an acrylic resin, or the like, a stack of twoor more of the above materials, or the like can be used as the basematerial 16 b.

For example, materials that contain polyester, polyolefin, polyamide(e.g., nylon or aramid), polyimide, polycarbonate, or a resin having anacrylic bond, a urethane bond, an epoxy bond, or a siloxane bond can beused for the resin film 16 c.

<Protective Base Material 17, Protective Film 17 p>

A flexible protective base material 17 and/or the protective film 17 pcan be provided. The flexible protective base material 17 or theprotective film 17 p protects the input device 100 by preventing damage.

For example, a resin film or resin plate of polyester, polyolefin,polyamide, polyimide, polycarbonate, an acrylic resin, or the like, astack of two or more of the above materials, or the like can be used asthe protective base material 17.

For example, a hard coat layer or a ceramic coat layer can be used asthe protective film 17 p. Specifically, a layer containing anultraviolet curable resin or aluminum oxide may be formed to overlapwith the second electrode 12.

<Display Portion 501>

The display portion 501 includes the plurality of pixels 502 arranged inmatrix (see FIG. 35C).

For example, the pixel 502 includes a sub-pixel 502B, a sub-pixel 502G,and a sub-pixel 502R, and each sub-pixel includes a display element anda pixel circuit for driving the display element.

In the pixel 502, the sub-pixel 502B is placed to overlap with thecoloring film CFB, the sub-pixel 502G is placed to overlap with thecoloring film CFG, and the sub-pixel 502R is placed to overlap with thecoloring film CFR.

In this embodiment, an example of using an organic electroluminescentelement that emits white light as a display element will be described;however, the display element is not limited to such element.

For example, organic electroluminescent elements that emit light ofdifferent colors may be included in different sub-pixels so that thelight of different colors can be emitted from different sub-pixels.

Other than organic electroluminescent elements, any of various displayelements such as display elements (electronic ink) that perform displayby an electrophoretic method, an electronic liquid powder (registeredtrademark) method, an electrowetting method, or the like; MEMS shutterdisplay elements; optical interference type MEMS display elements; andliquid crystal elements can be used.

Furthermore, this embodiment can be used in a transmissive liquidcrystal display, a transflective liquid crystal display, a reflectiveliquid crystal display, a direct-view liquid crystal display, or thelike. In the case of a transflective liquid crystal display or areflective liquid crystal display, some of or all of pixel electrodeshave functions of reflective electrodes. For example, some or all ofpixel electrodes are formed to contain aluminum, silver, or the like. Insuch a case, a memory circuit such as an SRAM can be provided under thereflective electrodes, leading to lower power consumption. A structuresuitable for employed display elements can be selected from among avariety of structures of pixel circuits.

In the display portion, an active matrix method in which an activeelement is included in a pixel or a passive matrix method in which anactive element is not included in a pixel can be used.

In an active matrix method, as an active element (a non-linear element),not only a transistor but also various active elements (non-linearelements) can be used. For example, a metal insulator metal (MIM), athin film diode (TFD), or the like can also be used. Since such anelement requires the smaller number of manufacturing steps,manufacturing cost can be reduced or yield can be improved.Alternatively, since the size of the element is small, the apertureratio can be improved, so that power consumption can be reduced orhigher luminance can be achieved.

As a method other than the active matrix method, the passive matrixmethod in which an active element (a non-linear element) is not used canalso be used. Since an active element (a non-linear element) is notused, the number of manufacturing steps is small, so that manufacturingcost can be reduced or the yield can be improved. Furthermore, since anactive element (a non-linear element) is not used, the aperture ratiocan be improved, so that power consumption can be reduced or higherluminance can be achieved, for example.

<Base Material 510>

For the base material 510, a flexible material can be used. For example,the material that can be used for the base material 16 can be used forthe base material 510.

For example, a stack in which a flexible base material 510 b, a barrierfilm 510 a that prevents diffusion of impurities, and a resin film 510 cattaching the barrier film 510 a to the flexible base material 510 b arestacked can be preferably used for the base material 510 (see FIG. 36A).

<Sealant 560>

A sealant 560 bonds the base material 16 to the base material 510. Thesealant 560 has a refractive index higher than that of the air. In thecase where light is extracted to the sealant 560 side, the sealant 560can reduce the refractive index difference between the sealant 560 and alayer in contact with the sealant 560.

The pixel circuits and the light-emitting elements (e.g., alight-emitting element 550R) are provided between the base material 510and the base material 16.

<Configuration of Pixel>

The sub-pixel 502R includes a light-emitting module 580R.

The sub-pixel 502R includes the light-emitting element 550R and thepixel circuit that can supply electric power to the light-emittingelement 550R and includes a transistor 502 t. Furthermore, thelight-emitting module 580R includes the light-emitting element 550R andan optical element (e.g., a coloring film CFR).

The light-emitting element 550R includes a lower electrode, an upperelectrode, and a layer containing a light-emitting organic compoundbetween the lower electrode and the upper electrode.

The light-emitting module 580R includes the coloring film CFR on thelight extraction side. The coloring film transmits light of a particularwavelength and is, for example, a layer that selectively transmits lightof red, green, or blue color. Other sub-pixels may be placed to overlapwith the window portion in which the coloring film is not provided,whereby light from the light-emitting element will be emitted notthrough the coloring film.

In the case where the sealant 560 is provided on the light extractionside, the sealant 560 is in contact with the light-emitting element 550Rand the coloring film CFR.

The coloring film CFR is positioned in a region overlapping with thelight-emitting element 550R. Accordingly, part of light emitted from thelight-emitting element 550R passes through the coloring film CFR and isemitted to the outside of the light-emitting module 580R as indicated byan arrow in FIG. 36A.

The light-blocking layer BM is provided to surround the coloring film(e.g., the coloring film CFR).

<Configuration of Pixel Circuit>

An insulating film 521 covering the transistor 502 t included in thepixel circuit is provided. The insulating film 521 can be used as a filmfor planarizing unevenness caused by the pixel circuits. A stacked filmincluding a layer that can prevent diffusion of impurities can be usedas the insulating film 521. This can prevent the reliability of thetransistor 502 t or the like from being lowered by diffusion ofimpurities.

The lower electrode is placed over the insulating film 521, and apartition wall 528 is provided over the insulating film 521 to cover anend portion of the lower electrode.

A layer containing a light-emitting organic compound is sandwichedbetween the lower electrode and the upper electrode, whereby alight-emitting element (e.g., the light-emitting element 550R) isformed. The pixel circuit supplies power to the light-emitting element.

Over the partition wall 528, a spacer that controls the gap between thebase material 16 and the base material 510 is provided.

<Configuration of Scan Line Driver Circuit>

A scan line driver circuit 503 g(1) includes a transistor 503 t and acapacitor 503 c. Note that transistors that can be formed in the sameprocess and over the same substrate as those of the pixel circuit can beused in the driver circuit.

<Converter CONV>

Various circuits that can convert the sensor signal DATA supplied fromthe sensor unit 10U and supply the converted signal to the flexiblesubstrate FPC 1 can be used as a converter CONV (see FIG. 35A and FIG.36A).

For example, a transistor M4 shown can be used for the converter CONY.

<Other Structure>

The display portion 501 is provided with an anti-reflective film 567 ppositioned in a region overlapping with pixels. As the anti-reflectivefilm 567 p, for example, a circular polarizing plate can be used.

The display portion 501 includes the wirings 511 through which signalscan be supplied. The wirings 511 are provided with the terminal 519.Note that the flexible substrate FPC 2 through which a signal such as animage signal or a synchronization signal is supplied is electricallyconnected to the terminal 519.

Note that a printed wiring board (PWB) may be attached to the flexiblesubstrate FPC 2.

The display portion 501 includes wirings such as scan lines, signallines, and power supply lines. Any of various conductive films can beused as the wirings.

Specifically, a metal element selected from aluminum, chromium, copper,tantalum, titanium, molybdenum, tungsten, nickel, yttrium, zirconium,silver, and manganese; an alloy including any of the above-describedmetal elements; an alloy including any of the above-described metalelements in combination; or the like can be used. In particular, one ormore elements selected from aluminum, chromium, copper, tantalum,titanium, molybdenum, and tungsten are preferably included. Inparticular, an alloy of copper and manganese is suitably used inmicrofabrication with the use of a wet etching method.

Alternatively, a stacked structure in which an alloy film or a nitridefilm which contains one or more elements selected from titanium,tantalum, tungsten, molybdenum, chromium, neodymium, and scandium isstacked over an aluminum film can be used.

Specifically, a two-layer structure in which a titanium film is stackedover an aluminum film, a two-layer structure in which a titanium film isstacked over a titanium nitride film, a two-layer structure in which atungsten film is stacked over a titanium nitride film, a two-layerstructure in which a tungsten film is stacked over a tantalum nitridefilm or a tungsten nitride film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, or the like can be used.

Alternatively, a light-transmitting conductive material including indiumoxide, tin oxide, or zinc oxide may be used.

<Modification Example of Display Portion>

Any of various kinds of transistors can be used in the display portion501.

FIGS. 36A and 36B illustrate a structure of the case where bottom-gatetransistors are used in the display portion 501.

For example, a semiconductor film containing an oxide semiconductor,amorphous silicon, or the like can be used in the transistor 502 t andthe transistor 503 t illustrated in FIG. 36A.

A structure in the case of using top-gate transistors in the displayportion 501 is illustrated in FIG. 36C.

For example, a semiconductor film including a polycrystalline siliconfilm, a single crystal silicon film that is transferred from a singlecrystal silicon substrate, or the like can be used in the transistor 502t and the transistor 503 t illustrated in FIG. 36C. Alternatively, anyof the transistors described in the above embodiments can be used as thetransistor 502 t and the transistor 503 t.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 12

In this embodiment, a configuration and a driving method of the sensorcircuit that can be used in the sensor unit of the input/output deviceof one embodiment of the present invention will be described withreference to FIGS. 37A, 37B1, and 37B2.

FIGS. 37A, 37B1, and 37B2 illustrate a configuration and a drivingmethod of the sensor circuit 19 and the converter CONV of one embodimentof the present invention.

FIG. 37A is a circuit diagram illustrating configurations of the sensorcircuit 19 and the converter CONY of one embodiment of the presentinvention, and FIGS. 37B1 and 37B2 are timing charts illustratingdriving methods.

The sensor circuit 19 of one embodiment of the present inventionincludes the first transistor M1 whose gate is electrically connected tothe first electrode 11 of the sensor element C and whose first electrodeis electrically connected to the wiring VPI that can supply, forexample, a ground potential (see FIG. 37A).

Furthermore, the second transistor M2 whose gate is electricallyconnected to the scan line G1 that can supply a selection signal, whosefirst electrode is electrically connected to a second electrode of thefirst transistor M1, and whose second electrode is electricallyconnected to the signal line DL that can supply, for example, the sensorsignal DATA may be included.

Furthermore, the third transistor M3 whose gate is electricallyconnected to the wiring RES that can supply a reset signal, whose firstelectrode is electrically connected to the first electrode 11 of thesensor element C, and whose second electrode is electrically connectedto the wiring VRES that can supply, for example, a ground potential maybe included.

The capacitance of the sensor element C is changed when an object getscloser to the first electrode 11 or the second electrode 12 or when agap between the first electrode 11 and the second electrode 12 ischanged, for example. Thus, the sensor circuit 19 can supply the sensorsignal DATA based on the change in the capacitance of the sensor elementC.

Note that a node at which the first electrode 11 of the sensor elementC, the gate of the first transistor M1, and the first electrode of thethird transistor are electrically connected to each other is referred toas a node A.

The wiring VRES and the wiring VPI each can supply a ground potential,for example, and the wiring VPO and the wiring BR each can supply a highpower supply potential, for example.

Furthermore, the wiring RES can supply a reset signal, the scan line G1can supply a selection signal, and the wiring CS can supply a controlsignal for controlling the potential of the second electrode 12 of thesensor element.

Furthermore, the signal line DL can supply the sensor signal DATA, and aterminal OUT can supply a signal converted based on the sensor signalDATA.

Any of various circuits that can convert the sensor signal DATA andsupply the converted signal to the terminal OUT can be used as theconverter CONV. For example, a source follower circuit, a current mirrorcircuit, or the like may be formed by the electrical connection betweenthe converter CONV and the sensor circuit 19.

Specifically, by using the converter CONV including the transistor M4, asource follower circuit can be formed (see FIG. 37A). Note that atransistor that can be formed in the same process as those of the firsttransistor M1 to the third transistor M3 may be used as the transistorM4.

The transistors M1 to M3 each include a semiconductor film. For example,for the semiconductor film, an element belonging to group 4, a compoundsemiconductor, or an oxide semiconductor can be used. Specifically, asemiconductor containing silicon, a semiconductor containing galliumarsenide, an oxide semiconductor containing indium, or the like can beused. In addition, any of the transistors described in the aboveembodiments can be used as the transistors M1 to M3.

<Driving Method of Sensor Circuit 19>

A driving method of the sensor circuit 19 will be described.

<First Step>

In a first step, a reset signal that turns on and then turns off thethird transistor is supplied to the gate, and the potential of the firstelectrode of the sensor element C is set to a predetermined potential(see a period T1 in FIG. 37B1).

Specifically, the reset signal is supplied from the wiring RES. Thethird transistor to which the reset signal is supplied sets thepotential of the node A to a ground potential, for example (see FIG.37A).

<Second Step>

In a second step, a selection signal that turns on the second transistorM2 is supplied to the gate of the second transistor M2, and the secondelectrode of the first transistor is electrically connected to thesignal line DL.

Specifically, the selection signal is supplied from the scan line G1.Through the second transistor M2 to which the selection signal issupplied, the second electrode of the first transistor is electricallyconnected to the signal line DL (see a period T2 in FIG. 37B1).

<Third Step>

In a third step, a control signal is supplied to the second electrode ofthe sensor element, and a potential changed based on the control signaland the capacitance of the sensor element C is supplied to the gate ofthe first transistor M1.

Specifically, a rectangular control signal is supplied from the wiringCS. The sensor element C in which the rectangular control signal issupplied to the second electrode 12 increases the potential of the nodeA based on the capacitance of the sensor element C (see the latter halfin the period T2 in FIG. 37B1).

For example, in the case where the sensor element is put in the air,when an object whose dielectric constant is higher than that of the airis placed closer to the second electrode 12 of the sensor element C, thecapacitance of the sensor element C is apparently increased.

Thus, the change in the potential of the node A caused by therectangular control signal becomes smaller than that in the case wherean object whose dielectric constant is higher than that of the air isnot placed close to the second electrode 12 of the sensor element C (seea solid line in FIG. 37B2).

<Fourth Step>

In a fourth step, a signal obtained by the change in the potential ofthe gate of the first transistor M1 is supplied to the signal line DL.

For example, a change in current due to the change in the potential ofthe gate of the first transistor M1 is supplied to the signal line DL.

The converter CONV converts the change in the current flowing throughthe signal line DL into a change in voltage and supplies the voltage.

<Fifth Step>

In a fifth step, a selection signal for turning off the secondtransistor is supplied to the gate of the second transistor.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 13

In this embodiment, electronic devices that can be formed using asemiconductor device of one embodiment of the present invention will bedescribed with reference to FIGS. 38A to 38G.

FIGS. 38A to 38D show electronic devices. These electronic devices caninclude a housing 600, a display portion 601, a speaker 603, an LED lamp604, operation keys 605 (including a power switch or an operationswitch), a connection terminal 606, a sensor 607 (a sensor having afunction of measuring or sensing force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared ray), amicrophone 608, and the like.

FIG. 38A shows a mobile computer that can include a switch 609, aninfrared port 620, and the like in addition to the above components.FIG. 38B shows a portable image reproducing device (e.g., a DVD player)that is provided with a memory medium and can include a second displayportion 602, a memory medium reading portion 621, and the like inaddition to the above components. FIG. 38C shows a television receiver,which can include a tuner, an image processing portion, and the like inaddition to the above components. FIG. 38D shows a portable televisionreceiver that can include a charger 627 capable of transmitting andreceiving signals, and the like in addition to the above components.

FIGS. 38E to 38G show a foldable portable information terminal 610. FIG.38E shows the portable information terminal 610 that is opened. FIG. 38Fshows the portable information terminal 610 that is being opened orbeing folded. FIG. 38G shows the portable information terminal 610 thatis folded. The portable information terminal 610 is highly portable whenfolded. When the portable information terminal 610 is opened, a seamlesslarge display region is highly browsable.

A display portion 612 is supported by three housings 615 joined togetherby hinges 613. By folding the portable information terminal 610 at aconnection portion between two housings 615 with the hinges 613, theportable information terminal 610 can be reversibly changed in shapefrom an opened state to a folded state. A display device according toone embodiment of the present invention can be used for the displayportion 612. For example, a display device that can be bent with aradius of curvature of greater than or equal to 1 mm and less than orequal to 150 mm can be used.

The electronic devices illustrated in FIGS. 38A to 38G can have avariety of functions, for example, a function of displaying a variety ofdata (a still image, a moving image, a text image, and the like) on thedisplay portion, a touch panel function, a function of displaying acalendar, date, time, and the like, a function of controlling a processwith a variety of software (programs), a wireless communicationfunction, a function of being connected to a variety of computernetworks with a wireless communication function, a function oftransmitting and receiving a variety of data with a wirelesscommunication function, a function of reading a program or data storedin a memory medium and displaying the program or data on the displayportion, and the like. Furthermore, the electronic device including aplurality of display portions can have a function of displaying imageinformation mainly on one display portion while displaying textinformation on another display portion, a function of displaying athree-dimensional image by displaying images where parallax isconsidered on a plurality of display portions, or the like. Furthermore,the electronic device including an image receiving portion can have afunction of shooting a still image, a function of taking a moving image,a function of automatically or manually correcting a shot image, afunction of storing a shot image in a memory medium (an external memorymedium or a memory medium incorporated in the camera), a function ofdisplaying a shot image on the display portion, or the like. Note thatthe electronic devices illustrated in FIGS. 38A to 38G can have avariety of functions, not limited to the above functions.

Electronic devices described in this embodiment are characterized byhaving a display portion for displaying some sort of information. Notethat the semiconductor device of one embodiment of the present inventioncan also be used for an electronic device that does not have a displayportion.

The structure described in this embodiment can be used in appropriatecombination with the structure described in any of the otherembodiments.

Note that contents that are not specified in any drawing or text in thespecification can be excluded from one embodiment of the invention.Alternatively, when the range of a value that is defined by the maximumand minimum values is described, part of the range is appropriatelynarrowed or part of the range is removed, whereby one embodiment of theinvention excluding part of the range can be constituted. In thismanner, it is possible to specify the technical scope of one embodimentof the present invention so that a conventional technology is excluded,for example.

As a specific example, a diagram of a circuit including a firsttransistor to a fifth transistor is illustrated. In that case, it can bespecified that the circuit does not include a sixth transistor in theinvention. It can be specified that the circuit does not include acapacitor in the invention. It can be specified that the circuit doesnot include a sixth transistor with a particular connection structure inthe invention. It can be specified that the circuit does not include acapacitor with a particular connection structure in the invention. Forexample, it can be specified that a sixth transistor whose gate isconnected to a gate of the third transistor is not included in theinvention. For example, it can be specified that a capacitor whose firstelectrode is connected to the gate of the third transistor is notincluded in the invention.

As another specific example, a description of a value, “a voltage ispreferably higher than or equal to 3 V and lower than or equal to 10 V”is given. In that case, for example, it can be specified that the casewhere the voltage is higher than or equal to −2 V and lower than orequal to 1 V is excluded from one embodiment of the invention. Forexample, it can be specified that the case where the voltage is higherthan or equal to 13 V is excluded from one embodiment of the invention.Note that, for example, it can be specified that the voltage is higherthan or equal to 5 V and lower than or equal to 8 V in the invention.For example, it can be specified that the voltage is approximately 9 Vin the invention. For example, it can be specified that the voltage ishigher than or equal to 3 V and lower than or equal to 10 V but is not 9V in the invention. Note that even when the description “a value ispreferably in a certain range” or “a value preferably satisfies acertain condition” is given, the value is not limited to thedescription. In other words, a description of a value that includes aterm “preferable”, “preferably”, or the like does not necessarily limitthe value.

As another specific example, a description “a voltage is preferred to be10 V” is given. In that case, for example, it can be specified that thecase where the voltage is higher than or equal to −2 V and lower than orequal to 1 V is excluded from one embodiment of the invention. Forexample, it can be specified that the case where the voltage is higherthan or equal to 13 V is excluded from one embodiment of the invention.

As another specific example, a description “a film is an insulatingfilm” is given to describe properties of a material. In that case, forexample, it can be specified that the case where the insulating film isan organic insulating film is excluded from one embodiment of theinvention. For example, it can be specified that the case where theinsulating film is an inorganic insulating film is excluded from oneembodiment of the invention. For example, it can be specified that thecase where the insulating film is a conductive film is excluded from oneembodiment of the invention. For example, it can be specified that thecase where the insulating film is a semiconductor film is excluded fromone embodiment of the invention.

As another specific example, the description of a stacked structure, “afilm is provided between an A film and a B film” is given. In that case,for example, it can be specified that the case where the film is astacked film of four or more layers is excluded from the invention. Forexample, it can be specified that the case where a conductive film isprovided between the A film and the film is excluded from the invention.

Note that various people can implement one embodiment of the inventiondescribed in this specification and the like. However, different peoplemay be involved in the implementation of the invention. For example, inthe case of a transmission/reception system, the following case ispossible: Company A manufactures and sells transmitting devices, andCompany B manufactures and sells receiving devices. As another example,in the case of a light-emitting device including a transistor and alight-emitting element, the following case is possible: Company Amanufactures and sells semiconductor devices including transistors, andCompany B purchases the semiconductor devices, provides light-emittingelements for the semiconductor devices, and completes light-emittingdevices.

In such a case, one embodiment of the invention can be constituted sothat a patent infringement can be claimed against each of Company A andCompany B. In other words, one embodiment of the invention can beconstituted so that only Company A implements the embodiment, andanother embodiment of the invention can be constituted so that onlyCompany B implements the embodiment. One embodiment of the inventionwith which a patent infringement suit can be filed against Company A orCompany B is clear and can be regarded as being disclosed in thisspecification or the like. For example, in the case of atransmission/reception system, even when this specification or the likedoes not include a description of the case where a transmitting deviceis used alone or the case where a receiving device is used alone, oneembodiment of the invention can be constituted by only the transmittingdevice and another embodiment of the invention can be constituted byonly the receiving device. Those embodiments of the invention are clearand can be regarded as being disclosed in this specification or thelike. Another example is as follows: in the case of a light-emittingdevice including a transistor and a light-emitting element, even whenthis specification or the like does not include a description of thecase where a semiconductor device including the transistor is used aloneor the case where a light-emitting device including the light-emittingelement is used alone, one embodiment of the invention can beconstituted by only the semiconductor device including the transistorand another embodiment of the invention can be constituted by only thelight-emitting device including the light-emitting element. Thoseembodiments of the invention are clear and can be regarded as beingdisclosed in this specification or the like.

Note that in this specification and the like, it might be possible forthose skilled in the art to constitute one embodiment of the inventioneven when portions to which all the terminals of an active element(e.g., a transistor or a diode), a passive element (e.g., a capacitor ora resistor), or the like are connected are not specified. In otherwords, one embodiment of the invention can be clear even when connectionportions are not specified. Further, in the case where a connectionportion is disclosed in this specification and the like, it can bedetermined that one embodiment of the invention in which a connectionportion is not specified is disclosed in this specification and thelike, in some cases. In particular, in the case where the number ofportions to which the terminal is connected might be plural, it is notnecessary to specify the portions to which the terminal is connected.Therefore, it might be possible to constitute one embodiment of theinvention by specifying only portions to which some of terminals of anactive element (e.g., a transistor or a diode), a passive element (e.g.,a capacitor or a resistor), or the like are connected.

Note that in this specification and the like, it might be possible forthose skilled in the art to specify the invention when at least theconnection portion of a circuit is specified. Alternatively, it might bepossible for those skilled in the art to specify the invention when atleast a function of a circuit is specified. In other words, when afunction of a circuit is specified, one embodiment of the presentinvention can be clear. Further, it can be determined that oneembodiment of the present invention whose function is specified isdisclosed in this specification and the like. Therefore, when aconnection portion of a circuit is specified, the circuit is disclosedas one embodiment of the invention even when a function is notspecified, and one embodiment of the invention can be constituted.Alternatively, when a function of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a connectionportion is not specified, and one embodiment of the invention can beconstituted.

Note that in this specification and the like, in a diagram or a textdescribed in one embodiment, it is possible to take out part of thediagram or the text and constitute an embodiment of the invention. Thus,in the case where a diagram or a text related to a certain portion isdescribed, the context taken out from part of the diagram or the text isalso disclosed as one embodiment of the invention, and one embodiment ofthe invention can be constituted. The embodiment of the presentinvention is clear. Therefore, for example, in a diagram or text inwhich one or more active elements (e.g., transistors or diodes),wirings, passive elements (e.g., capacitors or resistors), conductivefilms, insulating films, semiconductor films, organic materials,inorganic materials, components, devices, operating methods,manufacturing methods, or the like are described, part of the diagram orthe text is taken out, and one embodiment of the invention can beconstituted. For example, from a circuit diagram in which N circuitelements (e.g., transistors or capacitors; N is an integer) areprovided, it is possible to constitute one embodiment of the inventionby taking out M circuit elements (e.g., transistors or capacitors; M isan integer, where M<N). As another example, it is possible to constituteone embodiment of the invention by taking out M layers (M is an integer,where M<N) from a cross-sectional view in which N layers (N is aninteger) are provided. As another example, it is possible to constituteone embodiment of the invention by taking out M elements (M is aninteger, where M<N) from a flow chart in which N elements (N is aninteger) are provided. For another example, it is possible to take outsome given elements from a sentence “A includes B, C, D, E, or F” andconstitute one embodiment of the invention, for example, “A includes Band E”, “A includes E and F”, “A includes C, E, and F”, or “A includesB, C, D, and E”.

Note that in the case where at least one specific example is describedin a diagram or a text described in one embodiment in this specificationand the like, it will be readily appreciated by those skilled in the artthat a broader concept of the specific example can be derived.Therefore, in the diagram or the text described in one embodiment, inthe case where at least one specific example is described, a broaderconcept of the specific example is disclosed as one embodiment of theinvention, and one embodiment of the invention can be constituted. Theembodiment of the present invention is clear.

Note that in this specification and the like, a content described in atleast a diagram (which may be part of the diagram) is disclosed as oneembodiment of the invention, and one embodiment of the invention can beconstituted. Therefore, when a certain content is described in adiagram, the content is disclosed as one embodiment of the inventioneven when the content is not described with a text, and one embodimentof the invention can be constituted. In a similar manner, part of adiagram, which is taken out from the diagram, is disclosed as oneembodiment of the invention, and one embodiment of the invention can beconstituted. The embodiment of the present invention is clear.

This application is based on Japanese Patent Application serial no.2014-051798 filed with Japan Patent Office on Mar. 14, 2014, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A method for manufacturing a semiconductordevice, comprising the steps of: forming an insulating film over anoxide semiconductor film; forming a metal oxide film over the insulatingfilm; adding oxygen to the metal oxide film and the insulating film byan ion doping method, an ion implantation method, or plasma treatmentafter forming the metal oxide film; forming a conductive film over themetal oxide film to which oxygen is added; and adding an impurityelement to the oxide semiconductor film using the conductive film as amask.
 2. The method for manufacturing the semiconductor device,according to claim 1, wherein the metal oxide film has an end portionoverlapping with the oxide semiconductor film.
 3. The method formanufacturing the semiconductor device, according to claim 1, whereinthe conductive film serves as a gate electrode.
 4. The method formanufacturing the semiconductor device, according to claim 1, whereinthe metal oxide film to which oxygen is added is a semiconductor, andwherein the metal oxide film to which oxygen is added and the conductivefilm collectively serve as a gate electrode.
 5. The method formanufacturing the semiconductor device, according to claim 1, whereinthe metal oxide film contains one or more of indium, zinc, titanium,tungsten, tantalum, and molybdenum.
 6. The method for manufacturing thesemiconductor device, according to claim 1, wherein heat treatment isperformed after oxygen is added to the metal oxide film and theinsulating film.
 7. The method for manufacturing the semiconductordevice, according to claim 1, wherein the impurity element is one ormore of a rare gas, hydrogen, boron, nitrogen, fluorine, aluminum, andphosphorus.
 8. A method for manufacturing a semiconductor device,comprising the steps of: forming an insulating film over an oxidesemiconductor film; forming a metal oxide film over the insulating film;adding oxygen to the metal oxide film and the insulating film by an iondoping method, an ion implantation method, or plasma treatment afterforming the metal oxide film; forming a conductive film over the metaloxide film to which oxygen is added; adding an impurity element to theoxide semiconductor film using the conductive film as a mask; andforming an insulating film containing hydrogen and overlapping with theoxide semiconductor film.
 9. The method for manufacturing thesemiconductor device, according to claim 8, wherein the metal oxide filmhas an end portion overlapping with the oxide semiconductor film. 10.The method for manufacturing the semiconductor device, according toclaim 8, wherein the conductive film serves as a gate electrode.
 11. Themethod for manufacturing the semiconductor device, according to claim 8,wherein the metal oxide film to which oxygen is added is asemiconductor, and wherein the metal oxide film to which oxygen is addedand the conductive film collectively serve as a gate electrode.
 12. Themethod for manufacturing the semiconductor device, according to claim 8,wherein the metal oxide film contains one or more of indium, zinc,titanium, tungsten, tantalum, and molybdenum.
 13. The method formanufacturing the semiconductor device, according to claim 8, whereinheat treatment is performed after oxygen is added to the metal oxidefilm and the insulating film.
 14. The method for manufacturing thesemiconductor device, according to claim 8, wherein the insulating filmcontaining hydrogen contains nitrogen.
 15. The method for manufacturingthe semiconductor device, according to claim 8, wherein the insulatingfilm containing hydrogen is a silicon nitride film.
 16. The method formanufacturing the semiconductor device, according to claim 8, whereinthe impurity element is one or more of a rare gas, hydrogen, boron,nitrogen, fluorine, aluminum, and phosphorus.
 17. A method formanufacturing a semiconductor device, comprising the steps of: formingan insulating film over an oxide semiconductor film; forming a metaloxide film over the insulating film; adding oxygen to the metal oxidefilm and the insulating film by an ion doping method, an ionimplantation method, or plasma treatment after forming the metal oxidefilm; forming a conductive film over the metal oxide film to whichoxygen is added; etching the insulating film to which oxygen is addedand the metal oxide film to which oxygen is added to expose part of theoxide semiconductor film; adding an impurity element to the oxidesemiconductor film using the conductive film as a mask; and forming aninsulating film containing hydrogen and overlapping with the oxidesemiconductor film.
 18. The method for manufacturing the semiconductordevice, according to claim 17, wherein the metal oxide film has an endportion overlapping with the oxide semiconductor film.
 19. The methodfor manufacturing the semiconductor device, according to claim 17,wherein the conductive film serves as a gate electrode.
 20. The methodfor manufacturing the semiconductor device, according to claim 17,wherein the metal oxide film to which oxygen is added is asemiconductor, and wherein the metal oxide film to which oxygen is addedand the conductive film collectively serve as a gate electrode.
 21. Themethod for manufacturing the semiconductor device, according to claim17, wherein the metal oxide film contains one or more of indium, zinc,titanium, tungsten, tantalum, and molybdenum.
 22. The method formanufacturing the semiconductor device, according to claim 17, whereinheat treatment is performed after oxygen is added to the metal oxidefilm and the insulating film.
 23. The method for manufacturing thesemiconductor device, according to claim 17, wherein the insulating filmcontaining hydrogen contains nitrogen.
 24. The method for manufacturingthe semiconductor device, according to claim 17, wherein the insulatingfilm containing hydrogen is a silicon nitride film.
 25. The method formanufacturing the semiconductor device, according to claim 17, whereinthe impurity element is one or more of a rare gas, hydrogen, boron,nitrogen, fluorine, aluminum, and phosphorus.
 26. The method formanufacturing the semiconductor device, according to claim 1, whereinthe impurity element is added by an ion doping method, an ionimplantation method, or a plasma treatment method.
 27. The method formanufacturing the semiconductor device, according to claim 8, whereinthe impurity element is added by an ion doping method, an ionimplantation method, or a plasma treatment method.
 28. The method formanufacturing the semiconductor device, according to claim 17, whereinthe impurity element is added by an ion doping method, an ionimplantation method, or a plasma treatment method.
 29. A method formanufacturing a semiconductor device, comprising the steps of: formingan insulating film over an oxide semiconductor film; forming a metalnitride film over the insulating film; adding oxygen to the metalnitride film and the insulating film by an ion doping method, an ionimplantation method, or plasma treatment after forming the metal nitridefilm; forming a conductive film over the metal nitride film to whichoxygen is added; and adding an impurity element to the oxidesemiconductor film using the conductive film as a mask.
 30. The methodfor manufacturing the semiconductor device, according to claim 29,wherein the metal nitride film has an end portion overlapping with theoxide semiconductor film.
 31. The method for manufacturing thesemiconductor device, according to claim 29, wherein the conductive filmserves as a gate electrode.
 32. The method for manufacturing thesemiconductor device, according to claim 29, wherein the metal nitridefilm to which oxygen is added is a semiconductor, and wherein the metalnitride film to which oxygen is added and the conductive filmcollectively serve as a gate electrode.
 33. The method for manufacturingthe semiconductor device, according to claim 29, wherein the metalnitride film contains one or more of indium, zinc, titanium, tungsten,tantalum, and molybdenum.
 34. The method for manufacturing thesemiconductor device, according to claim 29, wherein heat treatment isperformed after oxygen is added to the metal nitride film and theinsulating film.
 35. The method for manufacturing the semiconductordevice, according to claim 29, wherein the impurity element is one ormore of a rare gas, hydrogen, boron, nitrogen, fluorine, aluminum, andphosphorus.